When a radio-frequency module is viewed in plan in a thickness direction of a mounting substrate, an electronic component overlaps an IC component. The electronic component includes four or more filters, each of which includes an input terminal and an output terminal. The IC component includes a first switch connected to the input terminals of at least four of the four or more filters and a second switch connected to the output terminals of the at least four filters. The input terminals of the at least four filters are in a first region including a center of the electronic component when viewed in plan in the thickness direction of the mounting substrate. The output terminals of the at least four filters are in a second region between the first region and a perimeter of the electronic component when viewed in plan in the thickness direction of the mounting substrate.

An electronic component module includes an electronic component, a resin structure, a through wire, and a wiring layer. The resin structure covers at least a portion of the electronic component. The through wire extends through the resin structure in a predetermined direction. The wiring layer electrically connects the electronic component to the through wire. The wiring layer includes a portion located between the electronic component and the through wire in plan view in the predetermined direction. The wiring layer has a protruding portion. The protruding portion protrudes in the predetermined direction between the electronic component and the through wire.

Structures and formation methods of a chip package are provided. The method includes forming multiple conductive structures over a carrier substrate. The method also includes disposing a semiconductor die over the carrier substrate such that the conductive structures surround the semiconductor die. The method further includes forming a protective layer to surround the conductive structures and the semiconductor die. In addition, the method includes disposing a shielding element over the semiconductor die and the conductive structures. The shielding element is electrically connected to the conductive structures.

Devices and methods related to radio-frequency (RF) switches having improved on-resistance performance. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first ON-resistance (Ron) value that is less than a second Ron value corresponding to a similar stack having a substantially uniform distribution of the parameter.

A module includes a substrate having a main surface, a first component mounted on the main surface, and two or more wires bonded to the main surface so as to straddle the first component. Each of the two or more wires has a first end and a second end. When attention is paid to two wires adjacent to each other out of the two or more wires, a distance between the first ends of the two wires is shorter than a distance between the second ends of the two wires.

A semiconductor structure including chips is provided. The chips are arranged in a stack. Each of the chips includes a radio frequency (RF) device. Two adjacent chips are bonded to each other. The RF devices in the chips are connected in parallel. Each of the RF devices includes a gate, a source region, and a drain region. The gates in the RF devices connected in parallel have the same shape and the same size. The source regions in the RF devices connected in parallel have the same shape and the same size. The drain regions in the RF devices connected in parallel have the same shape and the same size.

A high-frequency module includes a mounting substrate, electronic components, a sealing resin, and land conductors. The mounting substrate includes a front surface, a rear surface, and a side surface. The land conductors are provided on the rear surface. The electronic components are mounted on the front surface of the mounting substrate. A distance between the mounting surface of the land conductor near the side surface and the rear surface of the mounting substrate is larger than a distance between the mounting surface of the land conductor closer to the center than the land conductor near the side surface and the rear surface of the mounting substrate.

Disclosed are techniques for on-chip electromagnetic interference (EMI) shielding. In an aspect, an integrated circuit includes a noise-sensitive device, a first metallization layer disposed on a first side of the noise-sensitive device, wherein the first metallization layer includes a plurality of conductive routing layers, and wherein conductive routing within the plurality of conductive routing layers is configured as a first side of an on-chip electromagnetic interference (EMI) shield around the first side of the noise-sensitive device, and a second metallization layer disposed on a second side of the noise-sensitive device opposite the first side of the noise-sensitive device, wherein the second metallization layer includes one or more conductive routing layers, and wherein conductive routing within the one or more conductive routing layers is configured as a second side of the on-chip EMI shield around the second side of the noise-sensitive device.

A semiconductor device with an antenna includes a heat sink having first and second surfaces, a semiconductor chip provided on the second surface and having a circuit surface, a wiring board having a laminate of alternately disposed insulating layers and interconnect layers, and covering side surfaces of the heat sink and the semiconductor chip and the circuit surface, and exposing the first surface, and an antenna provided on the wiring board. The wiring board includes a board connecting part provided on an opposite side from the antenna, a first interconnect electrically connecting the board connecting part and a first terminal provided on the circuit surface, and a second interconnect electrically connecting the antenna and a second terminal provided on the circuit surface.

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a carrier, an element, and a first electronic component. The element is disposed on the carrier. The first electronic component is disposed above the element. The element is configured to adjust a first bandwidth of a first signal transmitted from the first electronic component.