Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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21/00
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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H01L21/02
Manufacture or treatment of semiconductor devices or of parts thereof
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H01L21/02107
Forming insulating materials on a substrate
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H01L21/02109
characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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H01L21/02112
characterised by the material of the layer
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H01L21/02123
the material containing silicon
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H01L21/02142
the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
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H01L21/0215
the material containing tantalum, e.g. TaSiOx
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H01L21/0215

TANTALUM COMPOUND AND METHODS OF FORMING THIN FILM AND FABRICATING INTEGRATED CIRCUIT DEVICE BY USING THE SAME
20170178961 · 2017-06-22 · ·

A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

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