Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by an RF power operating at between about 50 W and 1,000 W, at a pulsing frequency below about 100,000 Hz, and at a duty cycle between about 5% and 95%. The methods may include forming a layer of material on the substrate. The layer of material may include a silicon-containing material.

A structure body includes a base material and a siloxane based molecular membrane formed on the base material by use of an organic compound represented by Formula (1) or Formula (2): ##STR00001##
wherein any one of R1 to R5 is an amino group, others of R1 to R5 are each independently hydrogen or an alkyl group, R7 to R9 are each independently any one of hydroxy group, alkoxy group, alkyl group, and phenyl group on condition that one or more of R7 to R9 are each independently a hydroxy group or an alkoxy group, and R6 is an alkyl group.

A silicon-containing composition includes: a first polysiloxane; a second polysiloxane different from the first polysiloxane; and a solvent. The first polysiloxane includes a group which includes at least one selected from the group consisting of an ester bond, a carbonate structure, and a cyano group. The second polysiloxane includes a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms.

Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer.

A semiconductor device manufacturing method of embodiments includes: forming a silicon oxide film on a surface of a silicon carbide layer; performing a first heat treatment in an atmosphere containing nitrogen gas at a temperature equal to or more than 1200° C. and equal to or less than 1600° C.; and performing a second heat treatment in an atmosphere containing nitrogen oxide gas at a temperature equal to or more than 750° C. and equal to or less than 1050° C.

A method for manufacturing a semiconductor device includes forming a first pattern structure having a first opening on a lower structure comprising a semiconductor substrate. The first pattern structure includes a stacked pattern and a first spacer layer covering at least a side surface of the stacked pattern. A first flowable material layer including a SiOCH material is formed on the first spacer layer to fill the first opening and cover an upper portion of the first pattern structure. A first curing process including supplying a gaseous ammonia catalyst into the first flowable material layer is performed on the first flowable material layer to form a first cured material layer that includes water. A second curing process is performed on the first cured material layer to form a first low-k dielectric material layer. The first low-k dielectric material layer is planarized to form a planarized first low-k dielectric material layer.

Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H.sub.2 plasma, a second Ar plasma and an etchant.

Methods for depositing SiOC and SiOCN films are disclosed. Exemplary methods utilize precursors containing iodine and alkoxide, and can be used to form low-k spacers using O-free PEALD.

A device includes a substrate; a first layer over the substrate, the first layer containing a plurality of fin features and a trench between two adjacent fin features. The device also includes a porous material layer having a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed on a top surface of the first layer. The first and the second portions contain substantially same percentage of Si, substantially same percentage of O, and substantially same percentage of C.

A method for manufacturing a semiconductor device having a low-k carbon-containing dielectric layer includes: depositing a low-k carbon-containing dielectric material, which has a carbon content ranging from 16 atomic % to 23 atomic %, using a precursor mixture to form a carbon-containing dielectric layer having a k value ranging from 2.8 to 3.3 and a porosity ranging from 0.03% to 1.0%; forming the carbon-containing dielectric layer into a patterned carbon-containing dielectric layer having a recess therein by etching, the patterned carbon-containing dielectric layer having a porosity ranging from 1.0% to 2.0%; and filling the recess with an electrically conductive material to form an electrically conductive feature in the patterned carbon-containing dielectric layer.