A method of forming a semiconductor device includes forming a dielectric layer over a substrate, and curing the dielectric layer with a first curing process. The first curing process includes providing a first UV light source, filtering the first UV light source with a first filter, the first filter permitting a first electromagnetic radiation within a first pre-determined spectrum to pass through and blocking electromagnetic radiation outside the first pre-determined spectrum, and curing the dielectric layer with the first electromagnetic radiation of the first UV light source.

To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.

[Problem] To provide a perhydropolysilazane making it possible to form a siliceous film with minimal defects, and a curing composition comprising the perhydropolysilazane. [Means for Solution] The present invention provides a perhydropolysilazane having a weight-average molecular weight of 5,000 to 17,000, characterized in that when .sup.1H-NMR of a 17% by weight solution of said perhydropolysilazane dissolved in xylol is measured, the ratio of the amount of SiH.sub.1,2 based on the aromatic ring hydrogen content of the xylol is 0.235 or less and the ratio of the amount of NH based on the aromatic ring hydrogen content of the xylol is 0.055 or less, and a curing composition comprising the perhydropolysilazane. The present invention also provides a method for forming a siliceous film, comprising coating the curing composition on a substrate and heating.

A method for semiconductor processing includes forming a first dielectric layer comprising an N-type dopant over a first plurality of fins extending above a first region of a substrate, forming a second dielectric layer comprising a P-type dopant over the first plurality of fins and a second plurality of fins extending above a second region of the substrate, the second dielectric layer overlying the first dielectric layer, and forming an isolation layer between adjacent ones of the first plurality of fins, and between adjacent ones of the second plurality of fins. The method further includes performing an implantation process using a first dopant, the implantation process changing an etching rate of the isolation layer, and recessing the isolation layer, the first dielectric layer, and the second dielectric layer, where after the recessing, the first and the second plurality of fins extend above an upper surface of the isolation layer.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2N—SiH.sub.2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Described herein are functionalized cyclosilazane precursor compounds and compositions and methods comprising same to deposit a silicon-containing film such as, without limitation, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, or a combination thereof.

A composition for forming a silica layer, a method for manufacturing a silica layer, a silica layer manufactured by the method, and an electronic device including the silica layer. The composition for forming a silica layer includes a silicon-containing polymer and a solvent compound represented by Chemical Formula 1:

##STR00001##

An inorganic polysilazane resin of the present invention has a Si/N ratio (i.e. a ratio of contained silicon atoms to contained nitrogen atoms) of 1.30 or more. The inorganic polysilazane resin having such a high Si content can be produced by, for example, a method in which an inorganic polysilazane compound containing both Si—NH and Si—Cl is heated to react NH with Cl, a method in which a silazane oligomer (polymer) that leaves no Si—Cl bond is synthesized and a dihalosilane is added to the synthesized silazane oligomer (polymer) to perform a thermal reaction, and the like. A siliceous film can be formed by, for example, applying a coating composition containing the inorganic polysilazane resin onto a base plate and then dried and the dried product is then oxidized by bringing the dried product into contact with water vapor or hydrogen peroxide vapor and water vapor under heated conditions.

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Methods for plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I)

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.