Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula

(SiH.sub.a(NR.sub.2).sub.bX.sub.c).sub.(n+2)N.sub.n(SiH.sub.(2−d)X.sub.d).sub.(n−1),

wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′.sub.3]; further wherein each R′ of the [SiR′.sub.3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C.sub.1-C.sub.4 saturated or unsaturated hydrocarbyl group, a C.sub.1-C.sub.4 saturated or unsaturated alkoxy group, or an amino group [—NR.sup.1R.sup.2] with each R.sup.1 and R.sup.2 being further selected from H or a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d≠0; or d=0, c≠0.

Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH.sub.3).sub.x(SiH.sub.2—).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Described herein are conformal films and methods for forming a conformal metal or metalloid doped silicon nitride dielectric film wherein the conformal metal is zirconium, hafnium, titanium, tantalum, or tungsten. A method includes providing a substrate in a reactor; introducing into the reactor an at least one metal precursor which reacts; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated; and optionally purge the reactor with an inert gas; and the steps are repeated until a desired thickness of the conformal metal nitride film is obtained.

Methods for plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I)

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.

Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an .sup.1H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl.sub.3, when a peak derived from N.sub.3SiH.sub.1 and N.sub.2SiH.sub.2 is referred to as Peak 1 and a peak derived from NSiH.sub.3 is referred to as Peak 2, a ratio (P.sub.1/(P.sub.1+P.sub.2)) of an area (P.sub.1) of Peak 1 relative to a total area (P.sub.1+P.sub.2) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (P.sub.A/P.sub.B) of an area (P.sub.A) of Region A relative to an area (P.sub.B) of Region B is greater than or equal to about 1.5.

Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted perhydridocyclotrisilazane in the vapor phase to a reaction zone containing the substrate, forming a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and undergoes conversion to a discrete atomic or molecular layer of a silicon-based thin film via dissociation and/or decomposition due to or enabled by a substrate surface-induced process. The cycle is then repeated to form a silicon-based thin film of a desired thickness.

Provided is a dielectric material composition and related methods. The method includes patterning a substrate to include a first feature, a second feature adjacent to the first feature, and a trench disposed between the first and second features. The method further includes depositing a dielectric material over the first feature and within the trench. In some embodiments, the depositing the dielectric material includes flowing a first precursor, a second precursor, and a reactant gas into a process chamber. Further, while flowing the first precursor, the second precursor, and the reactant gas into the process chamber, a plasma is formed within the process chamber to deposit the dielectric material.

Methods for plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) ##STR00001##
wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.

Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a first plasma treatment and subjecting the substrate to a second plasma treatment. Thus the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a material on the lower surface.

The embodiments of mechanisms for doping wells of finFET devices described in this disclosure utilize depositing doped films to dope well regions. The mechanisms enable maintaining low dopant concentration in the channel regions next to the doped well regions. As a result, transistor performance can be greatly improved. The mechanisms involve depositing doped films prior to forming isolation structures for transistors. The dopants in the doped films are used to dope the well regions near fins. The isolation structures are filled with a flowable dielectric material, which is converted to silicon oxide with the usage of microwave anneal. The microwave anneal enables conversion of the flowable dielectric material to silicon oxide without causing dopant diffusion. Additional well implants may be performed to form deep wells. Microwave anneal(s) may be used to anneal defects in the substrate and fins.