A laser irradiation apparatus includes a laser light source which emits a laser beam, a first lens through which the laser beam emitted from the laser light source passes, a first scanner which reflects the laser beam passing through the first lens and changes a direction of the laser beam, a second scanner which reflects the laser beam deflected by the first scanner and changes a direction of the laser beam, a plurality of second lenses through which the laser beam deflected by the second scanner passes, where at least one of the plurality of second lenses is configured to vibrate in one direction, and an optical element through which the laser beam passing through the plurality of second lenses passes, where the optical element is configured to correct an incident angle of the laser beam incident a substrate.

A laser annealing apparatus including a carrying platform with a fixing surface, a laser source and a driving device. The laser source is configured to emit a laser beam toward the fixing surface, the laser beam having an illumination area which covers a center of the fixing surface and extends toward an edge of the fixing surface, in an extending direction of the illumination area the illumination area having a length which is not less than a distance between the center of the fixing surface and the edge of the fixing surface. The driving device is configured to drive the carrying platform to rotate around the center of the fixing surface.

Methods and systems for crystallizing a thin film provide a laser beam spot that is continually advanced across the thin film to create a sustained complete or partial molten zone that is translated across the thin film, and crystallizes to form uniform, small-grained crystalline structures or grains.

A method for forming a polycrystalline semiconductor layer includes forming a plurality of spacers over a dielectric layer, etching the dielectric layer using the plurality of spacers as an etch mask to form a recess in the dielectric layer, depositing an amorphous semiconductor layer over the plurality of spacers and the dielectric layer to fill the recess, and recrystallizing the amorphous semiconductor layer to form a polycrystalline semiconductor layer.

A laser annealing device includes: a CW laser device configured to emit continuous wave laser light caused by continuous oscillation to preheat the amorphous silicon; a pulse laser device configured to emit the pulse laser light toward the preheated amorphous silicon; an optical system configured to guide the continuous wave laser light and the pulse laser light to the amorphous silicon; and a control unit configured to control an irradiation energy density of the continuous wave laser light so as to preheat the amorphous silicon to have a predetermined target temperature less than a melting point thereof, and configured to control at least one of a fluence and a number of pulses of the pulse laser light so as to crystallize the preheated amorphous silicon.

The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.

The invention relates to a method for forming a uniform silicide film using a crystalline semiconductor film in which orientation of crystal planes is controlled, and a method for manufacturing a thin film transistor with less variation in electric characteristics, which is formed over an insulating substrate using the silicide film. A semiconductor film over which a cap film is formed is irradiated with a laser to be crystallized under the predetermined condition, so that a crystalline semiconductor film including large grain crystals in which orientation of crystal planes is controlled in one direction is formed. The crystalline semiconductor film is used for silicide, whereby a uniform silicide film can be formed.

The invention relates to a method for forming a uniform silicide film using a crystalline semiconductor film in which orientation of crystal planes is controlled, and a method for manufacturing a thin film transistor with less variation in electric characteristics, which is formed over an insulating substrate using the silicide film. A semiconductor film over which a cap film is formed is irradiated with a laser to be crystallized under the predetermined condition, so that a crystalline semiconductor film including large grain crystals in which orientation of crystal planes is controlled in one direction is formed. The crystalline semiconductor film is used for silicide, whereby a uniform silicide film can be formed.

A laser annealing method that includes forming a second layer having through holes on a first layer, and radiating laser light with a wavelength of 3 m or greater to the first layer via the through holes.

The invention relates to the field of laser annealing, and discloses a laser annealing device, a production process of a polycrystalline silicon thin film, and a polycrystalline silicon thin film produced by the same. The laser annealing device comprises an annealing chamber, in which a laser generator is provided, wherein an annealing window, through which the laser passes, and two light-cutting plates oppositely provided above the annealing window are also provided in the annealing chamber, wherein the light-cutting end face of each of the light-cutting plates is a wedge-shaped end face. In technical solutions of the invention, since the light-cutting end face is a wedge-shaped end face, the included angle formed by the reflected beam, which is formed by the reflection of the incident beam arriving at the light-cutting end face, and the ingoing beam, which passes through the annealing window, is relatively large, and the vibrating directions of them differ relatively greatly. Hence, the phenomenon of interference will hardly occur, and thus the interference mura generated on the polycrystalline silicon thin film due to the interference is reduced, the quality of the polycrystalline silicon thin film is improved, and the percent of pass of the product is also increased.