A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

A semiconductor device includes a III-V compound semiconductor layer and a source/drain structure. The source/drain structure is disposed on the III-V compound semiconductor layer. The source/drain structure includes a metal layer and metal silicide patterns. The metal layer is disposed on the metal silicide patterns, and a portion of the metal layer is disposed between the metal silicide patterns adjacent to each other.

Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 10.sup.18-10.sup.22 cm.sup.−3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N.sub.2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).

A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region includes multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further includes an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region includes a band gap, and the band gap of the electron blocking region is greater than the band gap of one of the barrier layers; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region; a confinement layer between the first aluminum-containing layer and the active region, wherein the confinement layer includes a thickness smaller than the thickness of one of the barrier layers; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies in the electron blocking region.

Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.

Described herein are IC devices that include molybdenum or a molybdenum compound, such as compounds including oxygen or nitrogen. The molybdenum may be deposited at a high concentration, e.g., at least 50% atomic density. Also described herein are mid-valent molybdenum precursors for depositing molybdenum, and reactions for producing the mid-valent molybdenum precursors. For example, the molybdenum precursors may be generated by reacting a higher-valent molybdenum compound with an amidinate or a formamidinate.

Systems, apparatus, and methods for initializing spin qubits with no external magnetic fields are described. An apparatus for quantum computing includes a quantum well and a pair of contacts. At least one of the contacts is formed of a ferromagnetic material. One of the contacts in the pair of contacts interfaces with a semiconductor material at a first position adjacent to the quantum well and the other contact in the pair of contacts interfaces with the semiconductor material at a second position adjacent to the quantum well. The ferromagnetic material initializes an electron or hole with a spin state prior to injection into the quantum well.

A method for integrating III-V semiconductor materials onto a rigid host substrate deposits a thin layer of reactive metal film on the rigid host substrate. The layer can also include a separation layer of unreactive metal or dielectric, and can be patterned. The unreactive metal pattern can create self-aligned device contacts after bonding is completed. The III-V semiconductor material is brought into contact with the thin layer of reactive metal. Bonding is by a low temperature heat treatment under a compressive pressure. The reactive metal and the functional semiconductor material are selected to undergo solid state reaction and form a stable alloy under the low temperature heat treatment without degrading the III-V material. A semiconductor device of the invention includes a functional III-V layer bonded to a rigid substrate via an alloy of a component of the functional III-V layer and a metal that bonds to the rigid substrate.

A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The gate may be configured to include a lateral overhang that is separated from an upper surface of the first dielectric layer.