A package structure includes: a substrate; a chip arranged on a part of a surface of the substrate; a metal thermal conducting layer arranged on a top surface of the chip; a capacitive structure arranged on another part of the surface of the substrate and arranged to be independent from the chip; and a cover including a first cover layer and a second cover layer connected to the first cover layer. A first opening is defined to extend through the first and the second cover layers. The second cover layer is arranged on a bottom of the first cover layer and perpendicular to the first cover layer. The first cover layer is arranged on the capacitive structure. The chip is received in the first opening. The second cover layer is arranged between the capacitive structure and the chip, and is fixed to the substrate.

An improved interconnect substrate having high density routings for a chip package assembly, a chip package assembly having a high density substrate, and methods for fabricating the same are provided that utilize substrates having a region of high density routings disposed over a region of low density routings. In one example, a method for fabricating an interconnect substrate is provided that includes forming a high density routing region by depositing a seed layer on a top surface of a low density routing region, patterning a mask layer on the seed layer, forming a plurality of conductive posts on the seed layer, removing the mask layer and the seed layer exposed between the conductive posts, and depositing a dielectric layer between the between the conductive posts, wherein at least some of the conductive posts are electrically coupled to conductive routing comprising the low density routing region.

A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

A wafer alignment assembly is provided. The wafer alignment assembly includes: a first tapered wall extending in a first horizontal direction; a first spring wall attached to an inner surface of the first tapered wall; a first set of conveyor rollers configured to rotate; a second tapered wall extending in the first horizontal direction, wherein the first tapered wall and the second tapered wall are characterized by a tapered shape that facilitates entry of a wafer assembly; a second spring wall attached to an inner surface of the first tapered wall; and a second set of conveyor rollers configured to rotate.

A package includes a package component, which further includes a top surface and a metal pad at the top surface of the package component. The package further includes a non-reflowable electrical connector over and bonded to the metal pad, and a molding material over the package component. The non-reflowable electrical connector is molded in the molding material and in contact with the molding material. The non-reflowable electrical connector has a top surface lower than a top surface of the molding compound.

A solder reflow apparatus may include a reflow chamber receiving a heat transfer fluid. The heat transfer fluid transfers heat to a solder for mounting an electronic part on a substrate. A heater heats the heat transfer fluid in the reflow chamber. A rail is arranged in an upper region of the reflow chamber and extends along a horizontal direction. A stage module may be movably connected to the rail and supports the substrate. The controller controls a positioning of the stage module to move the substrate supported by the stage module to different heights in a vertical direction.

An integrated substrate structure includes a redistribution film, a circuit substrate, and a plurality of conductive features. The redistribution film includes a fine redistribution circuitry, a circuit substrate is disposed over the redistribution film and includes a core layer and a coarse redistribution circuitry disposed in and on the core layer. The circuit substrate is thicker and more rigid than the redistribution film, and a layout density of the fine redistribution circuitry is denser than that of the coarse redistribution circuitry. The conductive features are interposed between the circuit substrate and the redistribution film to be connected to the fine redistribution circuitry and the coarse redistribution circuitry. A redistribution structure and manufacturing methods are also provided.

A package includes a package component, which further includes a top surface and a metal pad at the top surface of the package component. The package further includes a non-reflowable electrical connector over and bonded to the metal pad, and a molding material over the package component. The non-reflowable electrical connector is molded in the molding material and in contact with the molding material. The non-reflowable electrical connector has a top surface lower than a top surface of the molding compound.

A method of forming a premolded substrate for mounting a semiconductor die, comprising the steps of providing a carrier; forming conductive circuits on the carrier and forming a plurality of metallic contacts on the conductive circuits. Thereafter, the method further comprises encapsulating the carrier by compressing a top portion of each metallic contact to crush and flatten the top portion of each metallic contact, and introducing a molding compound to surround the plurality of metallic contacts such that the flattened top surfaces of the plurality of metallic contacts are exposed on and flush with a top surface of the molding compound.

An integrated substrate structure includes a redistribution film, a circuit substrate, and a plurality of conductive features. The redistribution film includes a fine redistribution circuitry, a circuit substrate is disposed over the redistribution film and includes a core layer and a coarse redistribution circuitry disposed in and on the core layer. The circuit substrate is thicker and more rigid than the redistribution film, and a layout density of the fine redistribution circuitry is denser than that of the coarse redistribution circuitry. The conductive features are interposed between the circuit substrate and the redistribution film to be connected to the fine redistribution circuitry and the coarse redistribution circuitry. A redistribution structure and manufacturing methods are also provided.