The scattering of a rare earth hydroxide is suppressed, and the loss of bond strength between a first ceramic member and a second ceramic member is reduced.

A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other, wherein the joint layer includes a perovskite oxide represented by ABO.sub.3 (wherein A is a rare earth element, and B is Al) and includes no rare earth single oxide containing exclusively a rare earth element and oxygen.

A component-manufacturing tool includes a frame body and a holding film covering an opening, wherein the frame body includes a first frame and a second frame; the holding film includes a base layer and a holding layer provided on one surface of the base layer, and the holding film is sandwiched and held between the first frame and the second frame in a stretched state; and a ratio R.sub.E1 (=E(100)/E(25)) of an elastic modulus E(100? C.) of the base layer to an elastic modulus E(25? C.) of the base layer is 0.2?R.sub.E1?1, and E(25) is 35 MPa or more and 3500 MPa or less. A component-manufacturing method includes a component holding step of holding components to the holding layer of the component-manufacturing tool; and a chucking step of chucking and fixing the holding film, to which holds the components, to a surface of a heated chuck table.

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

The present embodiments provide a photoelectric conversion device having a laminate structure of a substrate, a transparent electrode, an active layer, and a counter electrode, stacked in this order. In the device, a cavity is provided on the counter electrode-side. The cavity penetrates through the counter electrode and has an opening area larger in the counter electrode than in the active layer.

An infrared reflow device includes an infrared heater and a heat conductor. Infrared radiation sources on the infrared heater are provided to emit a first infrared radiation of a first wavelength toward a semiconductor device. The heat conductor is placed between the infrared heater and the semiconductor device to absorb the first infrared radiation and radiate a second infrared radiation of a second wavelength toward the semiconductor device to reflow the semiconductor device. The second infrared radiation can be absorbed in a substrate of the semiconductor more efficiently than the first infrared radiation.

A filter device includes a plurality of coils of which central axes are spaced apart from one another and in parallel to one another and a plurality of ground members spaced apart from one another and extending in parallel to the central axes of the coils outside of the coils. Each of the coils is spaced apart from another coil closest thereto by a first distance. Each of the ground members is spaced apart from a coil closest thereto by a second distance. The number of ground members spaced apart from each of the coils by the second distance is the same.

A heating element in which, in a connecting portion of a rod portion in which the rod portion is connected to a heat generator, a connecting unit is provided in a face of the rod portion on which the rod portion is connected to the heat generator, a feeder terminal for feeding power to the heating element is formed on a face of the rod portion opposite to the face in which the connecting unit is provided and the rod portion includes, at the feeder terminal, a securing unit for securing the heating element, and the rod portion includes a hollow portion between the connecting unit and the securing unit. This provides a heating element that can prevent corrosion of a feeder terminal, possesses high durability, can be produced at low cost, and has a good temperature distribution.

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.