Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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21/00
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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H01L21/02
Manufacture or treatment of semiconductor devices or of parts thereof
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H01L21/04
the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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H01L21/50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07; e.g. sealing of a cap to a base of a container
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H01L21/60
Attaching; or detaching; leads or other conductive members, to be used for carrying current to or from the device in operation
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H01L2021/60007
involving a soldering or an alloying process
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H01L2021/60022
using bump connectors, e.g. for flip chip mounting
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H01L2021/60097
Applying energy, e.g. for the soldering or alloying process
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H01L2021/60195
using dynamic pressure, e.g. ultrasonic or thermosonic bonding
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H01L2021/60195

SUBSTRATE FOR STACKED MODULE, STACKED MODULE, AND METHOD FOR MANUFACTURING STACKED MODULE
20170179014 · 2017-06-22 ·

A substrate for a stacked module includes a stacked insulator in which a plurality of insulator layers mainly composed of a thermoplastic resin are stacked, a conductor pattern arranged along the plurality of insulator layers in the stacked insulator, an embedded component connected to the conductor pattern, a pad provided on a surface of the stacked insulator and configured to be ultrasonically bonded to a bump of a mounted component to be mounted on the surface of the stacked insulator, and an auxiliary conductor pattern between the pad and the embedded component and extending in a range that covers the pad and the embedded component as viewed in a stacking direction of the plurality of insulator layers.

SEMICONDUCTOR DEVICE
20250210503 · 2025-06-26 · ·

According to one embodiment, a semiconductor device includes a base substrate; a case provided on the base substrate; a first stack provided inside the case on the base substrate; a second stack provided apart from the first stack on the base substrate; and a first conductor having a flat plate shape and including a first portion in contact with the first stack and a second portion in contact with the second stack. The first stack includes a first insulator, a second conductor provided on the first insulator and in contact with the first portion, and a first semiconductor element electrically connected to the second conductor. The second stack includes a second insulator and a third conductor provided on the second insulator and in contact with the second portion, and does not include a semiconductor element.

SEMICONDUCTOR DEVICE
20250210504 · 2025-06-26 · ·

According to one embodiment, a semiconductor device includes: a substrate; a case provided on the substrate and including a resin layer and a terminal; and a circuit board provided on the substrate and including a semiconductor chip and a wiring electrically connected to the semiconductor chip and the terminal, wherein the terminal includes a first portion extending from the resin layer toward the circuit board, a second portion bonded to the wiring, and a third portion between the first portion and the second portion, and the third portion is recessed toward an opposite side of a side of the substrate from the second portion.