A semiconductor package structure is provided. The semiconductor package structure includes a first electronic component on a substrate. The semiconductor package structure also includes a second electronic component stacked on the first electronic component. The active surface of the first electronic component faces the active surface of the second electronic component. The semiconductor package structure further includes a molding compound on the first electronic component and surrounding the second electronic component. In addition, the semiconductor package structure includes a third electronic component stacked on the second electronic component and the molding compound.

A semiconductor device and fabricating methods thereof are disclosed. The semiconductor device includes: a plurality of dies stacked in a vertical direction; a thermal conductive layer deposited on a top surface of a topmost die; a base die located on a bottom surface of a bottommost die; and a first contact structure extending vertically through the plurality of dies. The first contact structure includes one or more first channels. Each first channel has a first end being in contact with the base die and has a second end being in contact with the thermal conductive layer.