A method of semiconductor device fabrication that enables fine-line geometry lithographic definition and small form-factor packaging comprises: forming contacts on a metal layer of the semiconductor device; applying a protective mask layer over active regions and surfaces of the contacts having rough surface morphology; planarizing a surface of the semiconductor device until the protective mask layer is removed and the surfaces of the contacts having rough surface morphology are planarized; and forming contact stacks on the surfaces of the contacts which are planarized.

A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package has a redistribution layer, at least one die over the redistribution layer, through interlayer vias on the redistribution layer and aside the die and a molding compound encapsulating the die and the through interlayer vias disposed on the redistribution layer. The semiconductor package has connectors connected to the through interlayer vias and a protection film covering the molding compound and the die. The protection film is formed by a printing process.

A semiconductor package includes an interposer chip having a frontside, a backside, and a corner area on the backside defined by a first corner edge and a second corner edge of the interposer chip. A die is bonded to the frontside of the interposer chip. At least one dam structure is formed on the corner area of the backside of the interposer chip. The dam structure includes an edge aligned to at least one the first corner edge and the second corner edge of the interposer chip.

A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package has a redistribution layer, at least one die over the redistribution layer, through interlayer vias on the redistribution layer and aside the die and a molding compound encapsulating the die and the through interlayer vias disposed on the redistribution layer. The semiconductor package has connectors connected to the through interlayer vias and a protection film covering the molding compound and the die. The protection film is formed by a printing process.

A method of semiconductor device fabrication that enables fine-line geometry lithographic definition and small form-factor packaging comprises: forming contacts on a metal layer of the semiconductor device; applying a protective mask layer over active regions and surfaces of the contacts having rough surface morphology; planarizing a surface of the semiconductor device until the protective mask layer is removed and the surfaces of the contacts having rough surface morphology are planarized; and forming contact stacks on the surfaces of the contacts which are planarized

A method of fabricating a stretchable and flexible electronic device includes forming each of the functional layers is by: (i) forming on an elastomer substrate a conductive interconnect pattern having islands interconnected by bridges; (ii) applying a conductive paste to the islands; (iii) positioning at least one functional electronic component on each island; and (iv) applying heat to cause the conductive paste to reflow. An elastomer encapsulant is formed over the functional electronic components and the conductive interconnect pattern on each of the functional layers. The elastomer encapsulant has a Young's modulus equal to or less than that of the substrate. The encapsulant includes a pigment to increase absorption of laser light. At least one via is laser ablated, which provides electrical connection to any two functional layers. The via is filled with solder paste to create a bond and electrical connection between the functional layers.

A semiconductor package includes an interposer chip having a frontside, a backside, and a corner area on the backside defined by a first corner edge and a second corner edge of the interposer chip. A die is bonded to the frontside of the interposer chip. At least one dam structure is formed on the corner area of the backside of the interposer chip. The dam structure includes an edge aligned to at least one the first corner edge and the second corner edge of the interposer chip.

A method for forming solder bumps by using a solder paste containing solder particles, a flux, and a volatile dispersion medium, the method including: applying the solder paste on a member having a plurality of electrodes on the surface; heating the member and the solder paste at a temperature below the melting point of solder constituting the solder particles to form a solder particle-containing layer; heating the member and the solder particle-containing layer at a temperature equal to or higher than the melting point of the solder constituting the solder particles to form solder bumps; and removing, by cleaning, a residue of the solder particle-containing layer remaining between adjacent solder bumps, in which the solder particles have an average particle size of 10 ?m or less, and the content of the dispersion medium in the solder paste is 30% by mass or more.

A semiconductor package includes an interposer chip having a frontside, a backside, and a corner area on the backside defined by a first corner edge and a second corner edge of the interposer chip. A die is bonded to the frontside of the interposer chip. At least one dam structure is formed on the corner area of the backside of the interposer chip. The dam structure includes an edge aligned to at least one the first corner edge and the second corner edge of the interposer chip.

The present disclosure, in some embodiments, relates to a semiconductor package. The semiconductor package includes an interposer substrate laterally surrounding through-substrate-vias. A redistribution structure is on a first surface of the interposer substrate. The redistribution structure laterally extends past an outermost sidewall of the interposer substrate. A packaged die is bonded to the redistribution structure. One or more conductive layers are arranged along a second surface of the interposer substrate opposite the first surface. A molding compound vertically extends from the redistribution structure to laterally surround the one or more conductive layers.