Provided are a neuromorphic device and a neuromorphic circuit using the neuromorphic device. The neuromorphic device is configured to include a first semiconductor region formed on a substrate in a wall shape or a dumbbell shape; first, second, third, and fourth doped regions sequentially formed in the first semiconductor region; first and second gate insulating film stacks disposed on the respective side surfaces of the second doped region; first and second gate electrodes respectively disposed on the respective side surfaces of the second doped region; the first and second gate electrodes disposed on the respective side surface of the second doped region, the first and second gate electrodes being electrically insulated from the second doped, region by the first and second gate insulating film stacks; and first and second electrodes electrically connected to the first and fourth doped regions, respectively.

A memory device includes a semiconductor substrate and a memory cell at a memory region of the semiconductor substrate. A memory cell includes a memory portion of the semiconductor substrate, a tunneling layer, a storage layer, a first electrode, and a second electrode. The tunneling layer is over the memory portion of the semiconductor substrate. The storage layer is over and in contact with the tunneling layer. The first electrode is over the storage layer. The second electrode is over and in contact with the tunneling layer but is spaced apart from the storage layer.

A memory device includes a stack structure over a substrate, a channel structure extending in the stack structure, and a dielectric layer over the channel structure. The dielectric layer includes a first material. The memory device may also include a drain-select gate (DSG) cut structure extending through the dielectric layer. The DSG cut structure includes a second material different from the first material.

The present disclosure relates to a method of forming an integrated circuit (IC). In some embodiments, a substrate is provided comprising a memory region and a logic region. A sacrificial logic gate electrode is formed within the logic region together with a control gate electrode or a select gate electrode within the memory region by patterning a control gate layer or a select gate layer. A first inter-layer dielectric layer is formed between the sacrificial logic gate electrode and the control gate electrode or the select gate electrode. A hard mask is formed over the first inter-layer dielectric layer to cover the memory region and to expose the sacrificial logic gate electrode within the logic region. The sacrificial logic gate electrode is replaced with a high-k gate dielectric layer and a metal layer to form a metal gate electrode within the logic region.

A stacked-layer body including a gate insulating film and a control gate electrode is formed in a product region and a scribe region. Next, a gate insulating film and a conductive film are so formed that the stacked-layer body is covered. Next, an etching process is so performed to the conductive film that an upper surface of the conductive film is lower than that of an upper surface of the stacked-layer body, thereby forming a measurement pattern in the scribe region. Next, a memory gate electrode is formed by patterning the conductive film in the product region. Next, a silicide layer is formed on an upper surface of the memory gate electrode in the product region in a state where an upper surface of the measurement pattern is covered by an insulating film. Next, a resistance value of the measurement pattern covered by the insulating film is measured.

The reliability of a semiconductor device having a nonvolatile memory is improved. The memory cell of the nonvolatile memory is of a split gate type, and has first and second n type semiconductor regions in a semiconductor substrate, a control electrode formed over the substrate between the semiconductor regions via a first insulation film, and a memory gate electrode formed over the substrate between the semiconductor regions via a second insulation film having a charge accumulation part. The SSI method is used for write to the memory cell. During the read operation of the memory cell, the first and second semiconductor regions function as source and drain regions, respectively. The first width of the first sidewall spacer formed adjacent to the side surface of the memory gate electrode is larger than the second width of the second sidewall spacer formed adjacent to the side surface of the control gate electrode.

A semiconductor device includes a control gate electrode and a memory gate electrode which are formed over the main surface of a semiconductor substrate in a memory cell region, and a first electrode and a second electrode which are formed over the main surface of the semiconductor substrate in a shunt region. The first electrode is formed integrally with the control gate electrode, and the second electrode is formed integrally with the memory gate electrode. The second electrode includes a first section formed along the side wall of the first electrode, and a second section extending along the main surface of the semiconductor substrate. Also, the height of the upper surface of the first electrode with respect to the main surface of the semiconductor substrate is generally same to the height of the upper surface of the first section of the second electrode.

A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a dielectric layer, a first gate electrode, a second gate electrode and a charge storage structure. The oxide-semiconductor layer is disposed on the first gate electrode on the substrate. The source/drain regions are disposed on the oxide-semiconductor layer. The first dielectric layer covers on the oxide-semiconductor layer and source/drain regions. A second gate electrode is disposed between source/drain regions and partially covers the oxide-semiconductor layer. The oxide-semiconductor layer may be optionally disposed between the first gate electrode and the oxide-semiconductor layer or be disposed on the second gate electrode.

The present disclosure relates to an integrated circuit that includes a semiconductor substrate having a periphery region and memory cell region separated by a boundary region. A pair of split gate flash memory cells are disposed on the memory cell region and include a first select gate and a first memory gate. A first gate electrode is disposed over a first gate dielectric layer on the periphery region. A second gate electrode is disposed over a second gate dielectric layer on the periphery region at a position between the boundary region and the first gate electrode. The second dielectric layer is thicker than the first gate dielectric layer. The first select gate and the first memory gate have upper surfaces that are co-planar or level with the upper surface of the second gate electrode.

In a semiconductor device having MONOS memories configured by fin-type MISFETs, an increase in parasitic capacitance between wirings accompanying miniaturization of the semiconductor device is prevented, and the reliability of the semiconductor device is improved. In a memory cell array in which a plurality of MONOS type memory cells formed on fins are arranged, source regions formed on the plurality of fins arranged in a short direction of the fin are electrically connected to each other by one epitaxial layer straddling the fins.