A structure of a protruding gate transistor is disclosed. The protruding gate transistor comprising a substrate, a source region, a drain region, a channel extension anchor, a channel layer, and gate structure. The gate structure comprising a gate insulator layer, and a gate conductor layer. The channel layer is formed to be protruding from the substrate to extend the length of the channel of the protruding gate transistor and alleviate from channel length modulation.

There is provided a semiconductor device having reduced contact resistance and enhanced performance. The semiconductor device includes a substrate, a first active pattern spaced apart from the substrate and extending in a first direction, and including a first two-dimensional semiconductor material, a first gate electrode extending in a second direction intersecting the first direction on the substrate, and through which the first active pattern penetrates, and a first source/drain contact which includes a first contact insertion film and a first filling metal film sequentially stacked on a side surface of the first gate electrode, and is connected to the first active pattern, wherein the first contact insertion film at least partially surrounds a lower surface, a side surface and an upper surface of an end portion of the first active pattern, and the first active pattern and the first contact insertion film form an ohmic contact.

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

Thin film transistors having double gates are described. In an example, an integrated circuit structure includes an insulator layer above a substrate. A first gate stack is on the insulator layer. A polycrystalline channel material layer is on the first gate stack. A second gate stack is on a first portion of the polycrystalline channel material layer, the second gate stack having a first side opposite a second side. A first conductive contact is adjacent the first side of the second gate stack, the first conductive contact on a second portion of the channel material layer. A second conductive contact is adjacent the second side of the second gate stack, the second conductive contact on a third portion of the channel material layer.

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

Described herein are various amorphous metal thin film transistors. Embodiments of such transistors include an amorphous metal gate electrode and a channel conductor formed on a non-conducting substrate. Further embodiments of such transistors include an amorphous metal source electrode, an amorphous metal drain electrode, and a channel conductor formed on a non-conducting substrate. Methods of forming such transistors are also described.

Provided are a thin film transistor structure, a manufacturing method thereof, and a display device. The method comprises: providing a substrate (10), and sequentially forming a gate (20), a gate insulating layer (30), an active layer (40), a doped layer (50), a source (610), a drain (620) and a channel region (70) on the substrate (10); placing the channel region (70) in a preset gas atmosphere for heating treatment; wherein, the channel region (70) is placed in a nitrogen atmosphere to heat for a first preset time, in a mixed atmosphere of nitrogen and ammonia to heat for a second preset time, in an ammonia atmosphere to heat for a third preset time; or first heating the channel region (70) for a fourth preset time, finally placing in the ammonia atmosphere to heat for a fifth preset time.

A semiconductor device includes a substrate including a first region and a second region, a first gate stack on the first region and including a first gate stacked insulating film and a first gate electrode on the first gate stacked insulating film, and a second gate stack on the second region and including a second gate stacked insulating film and a second gate electrode on the second gate stacked insulating film, wherein a width of the first gate stack is greater than a width of the second gate stack and the second gate stacked insulating film includes a plurality of ferroelectric material films.

A transistor with small parasitic capacitance can be provided. A transistor with high frequency characteristics can be provided. A semiconductor device including the transistor can be provided. Provided is a transistor including an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor has a first region where the first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween; a second region where the first conductor overlaps with the second conductor with the first and second insulators positioned therebetween; and a third region where the first conductor overlaps with the third conductor with the first and second insulators positioned therebetween. The oxide semiconductor including a fourth region where the oxide semiconductor is in contact with the second conductor; and a fifth region where the oxide semiconductor is in contact with the third conductor.

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.