A semiconductor device includes a substrate having a plurality of pads on a surface of the substrate, a semiconductor chip that includes a plurality of metal bumps connected to corresponding pads on the substrate, a first resin layer between the surface of the substrate and the semiconductor chip, a second resin layer between the substrate and the semiconductor chip and between the first resin layer and at least one of the metal bumps, and a third resin layer on the substrate and above the semiconductor chip.

A package structure and a method of manufacturing the same are provided. The package structure includes a substrate, a redistribution layer (RDL) structure, a first die, an encapsulant and a plurality of conductive terminals. The RDL structure is disposed on and electrically connected to the substrate. A width of the RDL structure is less than a width of the substrate. The first die is disposed on the substrate and the RDL structure. The first connectors of the first die are electrically connected to the RDL structure. The second connectors of the first die are electrically connected to the substrate. A first pitch of two adjacent first connectors is less than a second pitch of two adjacent second connectors. The encapsulant is on the substrate to encapsulate the RDL structure and the first die. The conductive terminals are electrically connected to the first die through the substrate and the RDL structure.

A chip-on-film package includes plurality of bumps may be arranged on an integrated circuit, and a plurality of metallic lines are connected to the bumps, thereby transmitting data to a panel, and in a data driving apparatus which may be implemented as the integrated circuit, first bumps and second bumps may be arranged in the same direction in a staggered manner.

A display panel includes a backplate, a eutectic bonding layer and an auxiliary layer that are located at a side of the backplate, and a plurality of light-emitting element bodies. The auxiliary layer includes a plurality of first members and a second member. At least one first member of the plurality of first members surrounds one part of the eutectic bonding layer, and the second member surrounds the plurality of first members. Each of the plurality of light-emitting element bodies is located at a side of the eutectic bonding layer and is connected to one part of the eutectic bonding layer.

A semiconductor package may include a package substrate, semiconductor chips, signal bumps, and first and second heat dissipation bumps. The semiconductor chips may be stacked on an upper surface of the package substrate, have first and second regions having different heat dissipation efficiencies. The second temperature may be higher than the first temperature. The signal bumps may be arranged between the semiconductor chips. The first heat dissipation bumps may be arranged between the semiconductor chips in the first region by a first pitch. The second heat dissipation bumps may be arranged between the semiconductor chips in the second region by a second pitch narrower than the first pitch. Heat generated from the second region of the semiconductor chips may be dissipated through the second heat dissipation bumps, which may be relatively closely arranged with each other.

A semiconductor package includes a package substrate, a lower semiconductor device arranged on the package substrate and including first through electrodes, first lower connection bumps arranged between the package substrate and the lower semiconductor device and electrically connecting the package substrate to the first through electrodes, a connecting substrate arranged on the package substrate and including second through electrodes, second lower connection bumps arranged between the package substrate and the connecting substrate and electrically connecting the package substrate to the second through electrodes, and an upper semiconductor device arranged on the lower semiconductor device and electrically connected to the first through electrodes and the second through electrodes.

Hyperchip structures and methods of fabricating hyperchips are described. In an example, an integrated circuit assembly includes a first integrated circuit chip having a device side opposite a backside. The device side includes a plurality of transistor devices and a plurality of device side contact points. The backside includes a plurality of backside contacts. A second integrated circuit chip includes a device side having a plurality of device contact points thereon. The second integrated circuit chip is on the first integrated circuit chip in a device side to device side configuration. Ones of the plurality of device contact points of the second integrated circuit chip are coupled to ones of the plurality of device contact points of the first integrated circuit chip. The second integrated circuit chip is smaller than the first integrated circuit chip from a plan view perspective.

A manufacturing method of a semiconductor package includes the following steps. At least one lower semiconductor device is provided. A plurality of conductive pillars are formed on the at least one lower semiconductor device. A dummy die is disposed on a side of the at least one lower semiconductor device. An upper semiconductor device is disposed on the at least one lower semiconductor device and the dummy die, wherein the upper semiconductor device reveals a portion of the at least one lower semiconductor device where the plurality of conductive pillars are disposed. The at least one lower semiconductor device, the dummy die, the upper semiconductor device, and the plurality of conductive pillars are encapsulated in an encapsulating material. A redistribution structure is formed over the upper semiconductor device and the plurality of conductive pillars.

A semiconductor package structure includes a semiconductor die surface having a narrower pitch region and a wider pitch region adjacent to the narrower pitch region, a plurality of first type conductive pillars in the narrower pith region, each of the first type conductive pillars having a copper-copper interface, and a plurality of second type conductive pillars in the wider pitch region, each of the second type conductive pillars having a copper-solder interface. A method for manufacturing the semiconductor package structure described herein is also disclosed.

A nonvolatile memory device includes a memory cell region including first pads and a peripheral circuit region including second pads. The regions comprises switches that are electrically connected with the pads, respectively, a test signal generator that generates test signals and to transmit the test signals to the switches, internal circuits that receive first signals through the pads and the switches, to perform operations based on the first signals, and to output second signals through the switches and the pads based on a result of the operations, and a switch controller that controls the switches so that the pads communicate with the test signal generator during a test operation and that the pads communicate with the internal circuits after a completion of the test operation. The peripheral circuit region is vertically connected to the memory cell region by the first metal pads and the second metal pads directly.