Apparatuses, such as semiconductor device packages, may include, for example, a device substrate including a semiconductor material and bond pads coupled with an active surface of the device substrate. A package substrate may be secured to the device substrate, the package substrate configured to route signals to and from the bond pads. A ball grid array may be supported on, and electrically connected to, the package substrate. Each ball of the ball grid array positioned and configured to carry a clock signal or a strobe signal may be located in a central column of the ball grid array.

A semiconductor package assembly is provided. The semiconductor package assembly includes a first semiconductor die, a second semiconductor die and third semiconductor die. The first semiconductor die and the second semiconductor die are arranged side-by-side. The first semiconductor die includes a first interface and a second interface. The first interface is arranged on a first edge of the first semiconductor die. The second interface is arranged on a second edge of the first semiconductor die that is close to the second semiconductor die and connected to the first edge. The third semiconductor die is stacked on the first semiconductor die and the second semiconductor die, wherein the third semiconductor die is electrically connected to the first semiconductor die by the first interface, and wherein the first semiconductor die is electrically connected to the second semiconductor die by the second interface.

Provided are a semiconductor chip with a reduced thickness and improved reliability, and a semiconductor package including the semiconductor chip. The semiconductor chip includes a semiconductor substrate, an integrated device layer on the semiconductor substrate, a multi-wiring layer on the integrated device layer, and a pad metal layer of a plurality of pad metal layers on the multi-wiring layer, and having test pads defined therein. The pad metal layers extend in a first direction parallel to a top surface of the semiconductor substrate or in a second direction perpendicular to the first direction. A test pad is a central portion of the pad metal layer and, and an outer portion of the pad metal layer excluding the test pad overlaps the wires in a third direction perpendicular to the top surface of the semiconductor substrate.

A semiconductor package includes a package substrate, a first semiconductor device on the package substrate, an interposer on the package substrate, and a plurality of conductive structures that spaces apart the first semiconductor device from the interposer, wherein the interposer has a cavity into which a portion of the first semiconductor device is accommodated. The interposer has a plurality of spacers protruding from a bottom surface of the cavity of the interposer. The cavity has an inclined sidewall inclined at a predetermined angle with respect to the lower surface of the interposer. The spacer has an inclined side surface inclined at a predetermined angle with respect to the bottom surface of the cavity.

A semiconductor package and a manufacturing method thereof are described. The semiconductor package includes a package having dies encapsulated by an encapsulant, a redistribution circuit structure, first and second modules and affixing blocks. The redistribution circuit structure is disposed on the package. The first and second modules are disposed on and respectively electrically connected to the redistribution circuit structure by first and second connectors disposed there-between. The first and second modules are adjacent to each other and disposed side by side on the redistribution circuit structure. The affixing blocks are disposed on the redistribution circuit structure and between the first and second modules and the redistribution circuit structure. The affixing blocks include first footing portions located below the first module, second footing portions located below the second module, and exposed portions exposed from the first and second modules. The affixing blocks join the first and second modules to the redistribution circuit structure.

A semiconductor package including a first interposer comprising a first substrate, first optical components over the first substrate, a first dielectric layer over the first optical components, and first conductive connectors embedded in the first dielectric layer, a photonic package bonded to a first side of the first interposer, where a first bond between the first interposer and the photonic package includes a dielectric-to-dielectric bond between a second dielectric layer on the photonic package and the first dielectric layer, and a second bond between the first interposer and the photonic package includes a metal-to-metal bond between a second conductive connector on the photonic package and a first one of the first conductive connectors and a first die bonded to the first side of the first interposer.

An embodiment package-on-package (PoP) device includes a package structure, a package substrate, and a plurality of connectors bonding the package structure to the package substrate. The package structure includes a logic chip bonded to a memory chip, a molding compound encircling the memory chip, and a plurality of conductive studs extending through the molding compound. The plurality of conductive studs is attached to contact pads on the logic chip.

A fan-out semiconductor device includes stacked semiconductor dies having die bond pads arranged in columns exposed at a sidewall of the stacked semiconductor dies. The stacked dies are encapsulated in a photo imageable dielectric (PID) material, which is developed to form through-hole cavities that expose the columns of bond pads of each die at the sidewall. The through-hole cavities are plated or filled with an electrical conductor to form conductive through-holes coupling die bond pads within the columns to each other.

The present disclosure is directed to an electronic assembly and method of forming thereof. The electronic assembly may include a package substrate with a top substrate surface and an interposer coupled to the package substrate at the top substrate surface. The interposer may include a plurality of through interposer vias and an opening extending through the interposer. A power module may be arranged in the opening in the interposer and coupled to the package substrate at the top substrate surface. The power module may include a plurality of interconnects including a first interconnect coupled to a first voltage and a second interconnect coupled to a second voltage.

A semiconductor package comprising: a first semiconductor chip extending in each of first and second directions that intersect each other; a second semiconductor chip on the first semiconductor chip in a third direction perpendicular to the first and second directions, wherein the second semiconductor chip includes a first area and a second area that is adjacent to and extends around the first area; and a bump structure and a conductive material layer between the first and second semiconductor chips, wherein the conductive material layer is on the bump structure, wherein the bump structure includes a first bump structure overlapping the first area in the third direction, and a second bump structure overlapping the second area in the third direction, wherein the first and second bump structures are spaced apart from each other, and a thickness of the second bump structure is larger than a thickness of the first bump structure.