Patent classifications
H03H9/6476
SURFACE ACOUSTIC WAVE FILTER AND DESIGN METHOD THEREOF
A surface acoustic wave filter includes a longitudinal mode resonator type first filter portion, a longitudinal mode resonator type second filter portion, an input terminal, and an output terminal. Assuming a wavelength of a frequency propagating through the first filter portion is defined as , a distance between a center of a width of an electrode finger closest to the output side IDT electrode and a center of a width of an electrode finger closest to the input side IDT electrode is equal to or more than 0.57. The electrode finger closest to the output side IDT electrode is closest among electrode fingers that constitute the input side IDT electrode and are arranged in the propagation direction, and the electrode finger closest to the input side IDT electrode is closest among electrode fingers that constitute the output side IDT electrode and are arranged in the propagation direction.
Elastic wave device, duplexer using the same, and communication apparatus using the duplexer
An elastic wave device includes resonators having a piezoelectric substrate, a resonation unit formed on the piezoelectric substrate, and reflectors formed on respective sides of the resonation unit on the piezoelectric substrate, and bumps formed on the piezoelectric substrate. The resonators are configured such that two or more split resonators are connected in parallel, and a bump is formed in a region sandwiched between reflectors of the split resonators.
MULTI-MODE SURFACE ACOUSTIC WAVE FILTER WITH SLANTED ACOUSTIC REFLECTORS
Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and slanted acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers with slanted pitches.
MULTI-MODE SURFACE ACOUSTIC WAVE FILTER
Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers arranged to suppress a spurious response due to shear horizontal mode of the multi-mode surface acoustic wave filter. For example, the acoustic reflector fingers can include stepped lengths and/or slanted pitches to suppress the spurious response due to shear horizontal mode.
MULTI-MODE SURFACE ACOUSTIC WAVE FILTER WITH STEPPED ACOUSTIC REFLECTORS
Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and stepped acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers with stepped lengths.
Multiplexer, transmitting device, and receiving device
In a multiplexer, input or output terminals of four acoustic wave filters are connected to, among a plurality of terminals provided on piezoelectric substrates, antenna terminals connected to an antenna connection terminal; the four acoustic wave filters include a first acoustic wave filter and a second acoustic wave filter that is located at a farther position from the antenna connection terminal than a position of the first acoustic wave filter in a plan view of a substrate; and among the plurality of terminals, the terminals located at the closest position to the antenna connection terminal in the plan view of the substrate are connected to the second acoustic wave filter as the antenna terminals.
Multiplexer
A multiplexer includes a common connection terminal on a first surface of a substrate and to be connected to an antenna element, and transmission-side and reception-side elastic wave filters of Band25 and Band66 mounted on a second surface of the substrate opposite the first surface, that are connected to the common connection terminal, and that have pass bands different from each other. The transmission-side elastic wave filter of Band66 is located nearest on the substrate to the common connection terminal among the elastic wave filters.
RADIO-FREQUENCY FILTER, MULTIPLEXER, RADIO-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION DEVICE
A radio-frequency filter includes a series-arm circuit on a circuit path that connects a first input/output terminal and a second input/output terminal. A parallel-arm circuit is connected to a node on the path and ground. The series-arm circuit includes a first impedance element, a first switch element connected to the first impedance element, and a series-arm resonator connected in parallel to the first impedance element and the first switch element. The parallel-arm circuit includes a first parallel-arm resonator, and a first switch circuit connected in series to the first parallel-arm resonator, the first switch circuit includes a second switch element. The first and second switch elements and the second switch elements include one or more transistors, and a gate width of the transistors included in the second switch element is larger than that of at least one of the transistors included in the first switch element.
Elastic wave device, radio-frequency front-end circuit, and communication device
An elastic wave device includes a first filter including an elastic wave resonator and a second filter connected to an antenna common terminal via a common node. When a first pass band of the first filter and second pass bands of the second filters are F1 and F2, respectively, F1<F2. The first filter includes at least one elastic wave resonator, and the elastic wave resonator uses Rayleigh waves propagating on a piezoelectric substrate made of LiNbO.sub.3, IDT electrodes including a Pt film on a piezoelectric layer made of LiNbO.sub.3, and a silicon oxide film covering the IDT electrodes. The thickness of the silicon oxide layer is about 33% or less of the wavelength of the IDT electrodes.
Multiplexer, transmission device, and reception device
A multiplexer includes filters on one principal surface of a mounting substrate and having mutually different frequency bands, and an inductance element which is incorporated in the mounting substrate and one end of which is connected to one end of the filter. The other end of the inductance element and one end of each of the filters, are connected to each other at a common connection point. The inductance element is defined by spiral wiring conductors disposed in first and second wiring layers provided in an inner layer of the mounting substrate. The mounting substrate includes third and fourth wiring layers which are adjacent to the first and second wiring layers, and in which no ground pattern is provided in a portion corresponding to a formation region of the inductance element.