A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The method for fabricating a compound semiconductor solar cell comprises forming a first mask layer on a front surface of a compound semiconductor layer of a second region which is a region other than a first region where the front electrode is to be formed; forming a seed metal layer on the front surface of the compound semiconductor layer of the first region and on the first mask layer of the second region; removing the seed metal layer over the first mask layer and the first mask layer; removing a part of the compound semiconductor layer of the second region from the front surface of the compound semiconductor layer by using the seed metal layer of the first region as a mask; forming a second mask layer on the compound semiconductor layer of the second region; forming an electrode metal layer on the seed metal layer not covered by the second mask layer; and removing the second mask layer.

A semiconductor device manufacturing method includes forming a first hole in a first processed layer. A first sacrificial film is formed in the first hole. A hole portion is formed in the first sacrificial film. A second sacrificial film is formed in the hole portion. A second processed layer is formed above the first sacrificial film and the second sacrificial film, and a second hole is formed in the second processed layer to expose the second sacrificial film. A third sacrificial film is formed on an inner side surface of the second hole, and a fourth sacrificial film is formed on the third sacrificial film. The second sacrificial film is etched using the fourth sacrificial film as a mask. The third sacrificial film exposed by etching the second sacrificial film is etched. The second processed layer is etched using the third sacrificial film as a mask.

A laser annealing method that includes forming a second layer having through holes on a first layer, and radiating laser light with a wavelength of 3 m or greater to the first layer via the through holes.

The invention relates to the field of laser annealing, and discloses a laser annealing device, a production process of a polycrystalline silicon thin film, and a polycrystalline silicon thin film produced by the same. The laser annealing device comprises an annealing chamber, in which a laser generator is provided, wherein an annealing window, through which the laser passes, and two light-cutting plates oppositely provided above the annealing window are also provided in the annealing chamber, wherein the light-cutting end face of each of the light-cutting plates is a wedge-shaped end face. In technical solutions of the invention, since the light-cutting end face is a wedge-shaped end face, the included angle formed by the reflected beam, which is formed by the reflection of the incident beam arriving at the light-cutting end face, and the ingoing beam, which passes through the annealing window, is relatively large, and the vibrating directions of them differ relatively greatly. Hence, the phenomenon of interference will hardly occur, and thus the interference mura generated on the polycrystalline silicon thin film due to the interference is reduced, the quality of the polycrystalline silicon thin film is improved, and the percent of pass of the product is also increased.

A semiconductor device manufacturing method includes forming a first hole in a first processed layer. A first sacrificial film is formed in the first hole. A hole portion is formed in the first sacrificial film. A second sacrificial film is formed in the hole portion. A second processed layer is formed above the first sacrificial film and the second sacrificial film, and a second hole is formed in the second processed layer to expose the second sacrificial film. A third sacrificial film is formed on an inner side surface of the second hole, and a fourth sacrificial film is formed on the third sacrificial film. The second sacrificial film is etched using the fourth sacrificial film as a mask. The third sacrificial film exposed by etching the second sacrificial film is etched. The second processed layer is etched using the third sacrificial film as a mask.

The present disclosure relates to a new generation of laser-crystallization approaches that can crystallize Si films for large displays at drastically increased effective crystallization rates. The particular scheme presented in this aspect of the disclosure is referred to as the advanced excimer-laser annealing (AELA) method, and it can be readily configured for manufacturing large OLED TVs using various available and proven technical components. As in ELA, it is mostly a partial-/near-complete-melting-regime-based crystallization approach that can, however, eventually achieve greater than one order of magnitude increase in the effective rate of crystallization than that of the conventional ELA technique utilizing the same laser source.

The present invention relates to a method of defining poly-silicon growth direction. The method of defining poly-silicon growth direction comprises Step 1, forming a buffer layer on a substrate; Step 2, forming an amorphous silicon thin film on the buffer layer; Step 3, forming regular amorphous silicon convex portions on the amorphous silicon thin film; and Step 4, transferring the amorphous silicon thin film into poly-silicon with an excimer laser anneal process. The growth direction of the poly-silicon as being formed can be controlled according to the present method of defining poly-silicon growth direction. Accordingly, the grain size of the poly-silicon can be raised.

A method for manufacturing a trench in a semiconductor substrate, and a semiconductor device are provided. The method includes: providing the semiconductor substrate; forming a hard mask layer on the semiconductor substrate, performing exposure and development to etch the hard mask layer and the semiconductor substrate to form a trench in the semiconductor substrate, the trench having a side surface and a bottom surface with an angle therebetween being greater than 90 degrees; irradiating the trench with a laser beam, such that a semiconductor material of a part of the semiconductor substrate within a first distance from the side surface or the bottom surface of the trench is melted; and cooling the semiconductor substrate, such that at least one of the side surface or the bottom surface of the trench is re-shaped to have a lower surface roughness than before.

A method for manufacturing a trench in a semiconductor substrate, and a semiconductor device are provided. The method includes: providing the semiconductor substrate; forming a hard mask layer on the semiconductor substrate, performing exposure and development to etch the hard mask layer and the semiconductor substrate to form a trench in the semiconductor substrate, the trench having a side surface and a bottom surface with an angle therebetween being greater than 90 degrees; irradiating the trench with a laser beam, such that a semiconductor material of a part of the semiconductor substrate within a first distance from the side surface or the bottom surface of the trench is melted; and cooling the semiconductor substrate, such that at least one of the side surface or the bottom surface of the trench is re-shaped to have a lower surface roughness than before.