A semiconductor substrate and a semiconductor device are disclosed. The semiconductor substrate includes a base layer, a buffer layer disposed on the base layer, a channel layer disposed on the buffer layer, a barrier layer disposed on the channel layer, and a buried field plate region embedded in the channel layer. In an embodiment, the channel layer includes a two-dimensional electron gas (2DEG), and the buried field plate region is located below the two-dimensional electron gas.

Methods of fabricating a semiconductor device include forming a first semiconductor layer of a first conductivity type and having a first dopant concentration, and forming a second semiconductor layer on the first semiconductor layer. The second semiconductor layer has a second dopant concentration that is less than the first dopant concentration. Ions are implanted into the second semiconductor layer to form an implanted region of the first conductivity type extending through the second semiconductor layer to contact the first semiconductor layer. A first electrode is formed on the implanted region of the second semiconductor layer, and a second electrode is formed on a non-implanted region of the second semiconductor layer. Related devices are also discussed.

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

The method for manufacturing comprises an ion implantation process of implanting a p-type impurity into a semiconductor layer mainly made of a group III nitride by ion implantation; a first heating process of heating the semiconductor layer at a first temperature in a first atmospheric gas including ammonia (NH.sub.3) after the ion implantation process; and a second heating process of heating the semiconductor layer, after the first heating process, at a second temperature that is lower than the first temperature in a second atmospheric gas including oxygen (O.sub.2).

There is provided a semiconductor multilayer structure, including: an n-type GaN layer; and a p-type GaN layer which is formed on the n-type GaN layer and into which Mg is ion-implanted, and generating an electroluminescence emission having a peak at a photon energy of 3.0 eV or more, by applying a voltage to a pn-junction formed by the n-type GaN layer and the p-type GaN layer.

A manufacturing method of dynamic random access memory (DRAM) with low leakage current includes forming a plurality of gates within a substrate of the DRAM; forming a plurality of drain/sources within the substrate of the DRAM by a first ion implantation; and forming a plurality of lightly doped drains under all of the plurality of drain/sources or partial drain/sources of the plurality of drain/sources by a second ion implantation after the plurality of drain/sources are formed. The plurality of lightly doped drains is used for reducing a leakage current within the DRAM, and the second ion implantation has a predetermined incident angle.

A method of obtaining a doped semiconductor layer, including the successive steps of: a) performing, in a first single-crystal layer made of a semiconductor alloy of at least a first element A1 and a second element A2, an ion implantation of a first element B which is a dopant for the alloy and of a second element C which is not a dopant for the alloy, to make an upper portion of the first layer amorphous and to preserve the crystal structure of a lower portion of the first layer; and b) performing a solid phase recrystallization anneal of the upper portion of the first layer, resulting in transforming the upper portion of the first layer into a doped single-crystal layer of the alloy.

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

A method for forming a semiconductor device comprising forming a sacrificial gate stack on a channel region of first layer of a substrate, forming a spacer adjacent to the sacrificial gate stack, forming a raised source/drain region on the first layer of the substrate adjacent to the spacer, forming a dielectric layer over the raised source/drain region, removing the sacrificial gate stack to expose the channel region of the first layer of the substrate, and implanting dopants in a second layer of the substrate to form an implant region in the second layer below the channel region of the first layer of the substrate, where the first layer of the substrate is arranged on the second layer of the substrate.

There is provided a semiconductor multilayer structure, including: an n-type GaN layer; and a p-type GaN layer which is formed on the n-type GaN layer and into which Mg is ion-implanted, and generating an electroluminescence emission having a peak at a photon energy of 3.0 eV or more, by applying a voltage to a pn-junction formed by the n-type GaN layer and the p-type GaN layer.