A microelectronic device includes a metal layer on a first dielectric layer. An etch stop layer is disposed over the metal layer and on the dielectric layer directly adjacent to the metal layer. The etch stop layer includes a metal oxide, and is less than 10 nanometers thick. A second dielectric layer is disposed over the etch stop layer. The second dielectric layer is removed from an etched region which extends down to the etch stop layer. The etched region extends at least partially over the metal layer. In one version of the microelectronic device, the etch stop layer may extend over the metal layer in the etched region. In another version, the etch stop layer may be removed in the etched region. The microelectronic device is formed by etching the second dielectric layer using a plasma etch process, stopping on the etch stop layer.

A cryogenic electronic package includes a first superconducting multi-chip module (SMCM), a superconducting interposer, a second SMCM and a superconducting semiconductor structure. The interposer is disposed over and coupled to the first SMCM, the second SMCM is disposed over and coupled to the interposer, and the superconducting semiconductor structure is disposed over and coupled to the second SMCM. The second SMCM and the superconducting semiconductor structure are electrically coupled to the first SMCM through the interposer. A method of fabricating a cryogenic electronic package is also provided.

A cryogenic electronic package includes a first superconducting multi-chip module (SMCM), a superconducting interposer, a second SMCM and a superconducting semiconductor structure. The interposer is disposed over and coupled to the first SMCM, the second SMCM is disposed over and coupled to the interposer, and the superconducting semiconductor structure is disposed over and coupled to the second SMCM. The second SMCM and the superconducting semiconductor structure are electrically coupled to the first SMCM through the interposer. A method of fabricating a cryogenic electronic package is also provided.

A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

A semiconductor device is disclosed that is formed with die bond pads at an edge of the semiconductor die. The die bond pads may be formed partially in a kerf area between semiconductor die on a wafer. When the wafer is diced, the die bond pads are severed along their length, leaving a portion of the die bond pads exposed at an edge of the diced semiconductor die. Having die bond pads at the edge of the die minimizes the offset between die when stacked into a package.

A semiconductor device is disclosed that is formed with die bond pads at an edge of the semiconductor die. The die bond pads may be formed partially in a kerf area between semiconductor die on a wafer. When the wafer is diced, the die bond pads are severed along their length, leaving a portion of the die bond pads exposed at an edge of the diced semiconductor die. Having die bond pads at the edge of the die minimizes the offset between die when stacked into a package.

A method of manufacturing a semiconductor package including coating a flux on a connection pad provided on a first surface of a substrate, the flux including carbon nanotubes (CNTs), placing a solder ball on the connection pad coated with the flux, forming a solder layer attached to the connection pad from the solder ball through a reflow process, and mounting a semiconductor chip on the substrate such that the solder layer faces a connection pad in the semiconductor chip may be provided.