A manufacturing method of a semiconductor package is provided. The manufacturing method includes the following. A plurality of semiconductor components are provided. Each semiconductor component has at least one conductive bump. A substrate is provided. The substrate has a plurality of conductive pads. A transfer device is provided. The transfer device transfers the semiconductor components onto the substrate. A heating device is provided. The heating device heats or pressurizes at least two semiconductor components. During transferring of the semiconductor components to the substrate, the at least one conductive bump of each semiconductor component is docked to a corresponding one of the conductive pads.

A semiconductor package includes a first semiconductor chip on a wiring structure, a plurality of internal terminals between the wiring structure and the first semiconductor chip; a high thermal conductivity layer is between the wiring structure and the first semiconductor chip; and an encapsulator on the high thermal conductivity layer and contacting the second semiconductor chip. Sidewalls of at least the wiring structure and the encapsulator are substantially coplanar.

A semiconductor package includes a first semiconductor chip on a wiring structure, a plurality of internal terminals between the wiring structure and the first semiconductor chip; a high thermal conductivity layer is between the wiring structure and the first semiconductor chip; and an encapsulator on the high thermal conductivity layer and contacting the second semiconductor chip. Sidewalls of at least the wiring structure and the encapsulator are substantially coplanar.

A detection structure and a detection method are provided. The method includes the following. A display backplane, a detection circuit board, and a detection light-emitting diode (LED) chip are provided. The detection circuit board is disposed on the display backplane, to connect a first detection line on the detection circuit board with a first contact electrode and connect a second detection line on the detection circuit board with a second contact electrode. A drive signal is output via the display backplane to the first detection line and the second detection line. A contact electrode pair on the display backplane corresponding to the detection LED chip is determined to be abnormal on condition that the detection LED chip is unlighted.

A detection structure and a detection method are provided. The method includes the following. A display backplane, a detection circuit board, and a detection light-emitting diode (LED) chip are provided. The detection circuit board is disposed on the display backplane, to connect a first detection line on the detection circuit board with a first contact electrode and connect a second detection line on the detection circuit board with a second contact electrode. A drive signal is output via the display backplane to the first detection line and the second detection line. A contact electrode pair on the display backplane corresponding to the detection LED chip is determined to be abnormal on condition that the detection LED chip is unlighted.

A detection method and a detection structure for a display backplane is provided in the disclosure. The detection method includes the following. The display backplane is provided. The display backplane is provided with a contact electrode pair. A detection structure is provided. The detection structure includes a light-emitting element and a detection circuit configured to conduct an electrical signal to the light-emitting element. The detection structure is assembled on the display backplane to connect the detection circuit to the contact electrode pair. A drive electrical signal is outputted to the contact electrode pair. If the light-emitting element does not emit light, the contact electrode pair is determined as a fault point.

A detection method and a detection structure for a display backplane is provided in the disclosure. The detection method includes the following. The display backplane is provided. The display backplane is provided with a contact electrode pair. A detection structure is provided. The detection structure includes a light-emitting element and a detection circuit configured to conduct an electrical signal to the light-emitting element. The detection structure is assembled on the display backplane to connect the detection circuit to the contact electrode pair. A drive electrical signal is outputted to the contact electrode pair. If the light-emitting element does not emit light, the contact electrode pair is determined as a fault point.

In a method of manufacturing a semiconductor device, an opening is formed in a first dielectric layer so that a part of a lower conductive layer is exposed at a bottom of the opening, one or more liner conductive layers are formed over the part of the lower conductive layer, an inner sidewall of the opening and an upper surface of the first dielectric layer, a main conductive layer is formed over the one or more liner conductive layers, a patterned conductive layer is formed by patterning the main conductive layer and the one or more liner conductive layers, and a cover conductive layer is formed over the patterned conductive layer. The main conductive layer which is patterned is wrapped around by the cover conductive layer and one of the one or more liner conductive layers.

In a method of manufacturing a semiconductor device, an opening is formed in a first dielectric layer so that a part of a lower conductive layer is exposed at a bottom of the opening, one or more liner conductive layers are formed over the part of the lower conductive layer, an inner sidewall of the opening and an upper surface of the first dielectric layer, a main conductive layer is formed over the one or more liner conductive layers, a patterned conductive layer is formed by patterning the main conductive layer and the one or more liner conductive layers, and a cover conductive layer is formed over the patterned conductive layer. The main conductive layer which is patterned is wrapped around by the cover conductive layer and one of the one or more liner conductive layers.

A method of manufacturing a semiconductor package includes forming a plurality of trenches at a first surface of a silicon substrate, forming a conductive pad inside each of the plurality of trenches, forming a redistribution layer on the first surface of the silicon substrate, forming an external connection terminal on a first surface of the redistribution layer, removing the silicon substrate to expose each conductive pad, mounting a semiconductor chip to be connected to the conductive pads, and forming an encapsulant to cover at least one surface of the semiconductor chip.