A bonded assembly including: a first electronic component including a first substrate and a plurality of first electrodes disposed in a pressed area at a first height from a surface of the first substrate; a second electronic component including a second substrate and a plurality of second electrodes disposed at a second height from a surface of the second substrate, a second electrode overlapping with a corresponding first electrode to face the first electrode; a conductive bonding layer disposed between the first electrode and the second electrode overlapped with each other to bond the first electrode and the second electrode; and at least one spacer disposed between the first substrate and the second substrate to overlap the pressed area, the at least one spacer having a thickness that is greater than a value obtained by summing the first height and the second height.

A chip package is provided, in which includes: a packaging substrate, a chip and a plurality solder balls interposed between the packaging substrate and the chip for bonding the packaging substrate and the chip, wherein the solder balls include a first portion of a first size and a second portion of a second size that is different from the first size.

An embodiment includes a semiconductor package comprising: a substrate; a first semiconductor chip mounted on the substrate; a second semiconductor chip mounted on a top surface of the first semiconductor chip; a connecting bump disposed between the first and second semiconductor chips to electrically connect the second semiconductor chip to the first semiconductor chip; and a first heat dissipation part disposed on the top surface of the first semiconductor chip between the first and second semiconductor chips and spaced apart from a bottom surface of the second semiconductor chip.

An embodiment includes a semiconductor package comprising: a substrate; a first semiconductor chip mounted on the substrate; a second semiconductor chip mounted on a top surface of the first semiconductor chip; a connecting bump disposed between the first and second semiconductor chips to electrically connect the second semiconductor chip to the first semiconductor chip; and a first heat dissipation part disposed on the top surface of the first semiconductor chip between the first and second semiconductor chips and spaced apart from a bottom surface of the second semiconductor chip.

Systems and methods for providing a ball grid array connection include providing a circuit board having a circuit board surface including a plurality of pads. A ball grid array component includes a plurality of solder balls. The ball grid array component is coupled to the circuit board to position each of the plurality of solder balls adjacent a respective one of the plurality of pads. A solder reflow process is then performed to produce a plurality of soldered connections from each of the plurality of solder balls and a respective one of the plurality of pads. At least one spacer member is provided between the ball grid array component and the circuit board during the solder reflow process to provide a mechanical stop between the ball grid array component and the circuit board and a minimum height for each of the plurality of soldered connections.

A packaging structure includes a first substrate including a first metal terminal and a first protruding resin portion formed at a first surface; a second substrate including a second metal terminal and a second protruding resin portion formed at a second surface, the second metal terminal being made of the same kind of metal as the first metal terminal; and a sealing portion filled between the first surface of the first substrate and the second surface of the second substrate, the first metal terminal and the second metal terminal being directly bonded with each other, the first protruding resin portion and the second protruding resin portion being directly bonded with each other, each of the first protruding resin portion and the second protruding resin portion being made of a resin material that does not include fillers, and the sealing portion being made of a resin material including fillers.

A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and a method of manufacturing thereof, that comprises a first semiconductor die, a plurality of adhesive regions spaced apart from each other on the first semiconductor die, and a second semiconductor die adhered to the plurality of adhesive regions.

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate including a plurality of conductive traces and a recess filled with a conductive material electrically coupled to at least one of the plurality of conductive traces. The semiconductor structure also includes semiconductor chip. The semiconductor chip includes a plurality of conductive pads correspondingly electrically connected with the plurality of conductive traces through a plurality of conductive bumps. A height of each of the plurality of conductive bumps is determined by a minimum distance between the plurality of conductive pads and the corresponding conductive traces thereof.

A semiconductor device includes a substrate main body, a plurality of first bump pads, and redistribution layer (RDL). The first bump pads are disposed adjacent to a surface of the substrate main body, each of the first bump pads has a first profile from a top view, the first profile has a first width along a first direction and a second width along a second direction perpendicular to the first direction, and the first width of the first profile is greater than the second width of the first profile. The RDL is disposed adjacent to the surface of the substrate main body, and the RDL includes a first portion disposed between two first bump pads.

Aspects of the present disclosure include integrated circuit (IC) structures with angled interconnect elements. An IC structure according to the present disclosure can include: an IC chip interconnect surface including a radially inner region positioned within a radially outer region; and a plurality of conductive pillars extending outward from the radially inner region of the IC chip interconnect surface, relative to a radial centerline axis of the radially inner region of the IC chip interconnect surface, wherein the radially inner region of the IC chip interconnect surface is free of conductive pillars thereon.