A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.

A half bridge circuit includes an input connection configured to supply an electric input, an output connection configured to supply an electric output to a load to be connected to the output connection, a switch and a diode arranged between the input connection and the output connection and a voltage limiting inductance arranged in series between the switch and the diode. The voltage limiting inductance is configured to limit, upon switching the switch, a maximum voltage across the switch to below a breakdown voltage of the switch. A corresponding method of operating the half bridge circuit and package are also described.

A half bridge circuit includes an input connection configured to supply an electric input, an output connection configured to supply an electric output to a load to be connected to the output connection, a switch and a diode arranged between the input connection and the output connection and a voltage limiting inductance arranged in series between the switch and the diode. The voltage limiting inductance is configured to limit, upon switching the switch, a maximum voltage across the switch to below a breakdown voltage of the switch. A corresponding method of operating the half bridge circuit and package are also described.

A semiconductor device includes a semiconductor chip including an upper electrode, a lead frame having a bonding part and a rising part, and a bonding member joining the upper electrode to the bonding part. The upper electrode has electrode lateral surfaces including a first lateral surface. The bonding part has a bonding front surface and terminal lateral surfaces that include a second lateral surface. The bonding part is joined to the upper electrode such that the second lateral surface faces the first lateral surface. The rising part extends upward from the first lateral surface. In a direction parallel to the electrode front surface, a first shortest distance between a center of the electrode front surface in a plan view and the second lateral surface is equal to or greater than 40% of a second shortest distance between the first lateral surface and the second lateral surface.

A connection structure is provided that includes a semiconductor substrate, a first layer arranged on the semiconductor substrate, the first layer being configured to provide shielding against radioactive rays, a second layer arranged on the first layer, the second layer including solder including Pb, and an electrically conductive member arranged on the second layer.

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

A lead frame extends from inside a sealing resin to outside the sealing resin, and is placed to make contact with a main surface of an insulating sheet opposite to a heat dissipation plate. A semiconductor element is jointed to at least a portion of a main surface of the lead frame opposite to the insulating sheet within the sealing resin. The surface of the insulating sheet in contact with the lead frame is inclined and lowered to move away from the lead frame in an end region including at least a portion of an outermost end in plan view of the insulating sheet. The sealing resin enters a region between the lead frame and the insulating sheet in the end region. The lead frame is flat at least within the sealing resin.

A lead frame extends from inside a sealing resin to outside the sealing resin, and is placed to make contact with a main surface of an insulating sheet opposite to a heat dissipation plate. A semiconductor element is jointed to at least a portion of a main surface of the lead frame opposite to the insulating sheet within the sealing resin. The surface of the insulating sheet in contact with the lead frame is inclined and lowered to move away from the lead frame in an end region including at least a portion of an outermost end in plan view of the insulating sheet. The sealing resin enters a region between the lead frame and the insulating sheet in the end region. The lead frame is flat at least within the sealing resin.

A electrical connection element includes a planar mating surface adapted for mating with a metal bonding surface, a rim that forms an enclosed shape around the planar mating surface, and a plurality of outgassing grooves formed in the planar mating surface, wherein each of the outgassing grooves comprises a proximal end that is spaced apart from the rim and a distal end that intersects the rim, and wherein a cross-sectional area of each of the outgassing grooves increases along a lengthwise direction going from the proximal end to the distal end.