The present invention provides a pixel unit and an array substrate. The pixel electrode includes four branch sections to divide the pixel zone into four display domains, helping improve the large angle color shifting problem of a display product and also simplifying the structure of the pixel electrode and making the manufacturing process simple, and facilitating the production of large-size wide-angle display products. The array substrate of the present invention is composed, in the horizontal direction, of multiple pixel units. The pixel units each include a pixel electrode that includes four branch sections to divide the pixel zone into four display domains, helping improve the large angle color shifting problem of a display product, and the pixel electrode has a simple structure to simplify the manufacturing process and facilitate the production of large-size wide-angle display products.

An array substrate, a manufacturing method thereof and an organic light emitting diode display device are provided. The manufacturing method of the array substrate includes forming a first thin film transistor including a first semiconductor pattern, including forming a first electrode pattern including a first source electrode and a first drain electrode and a second electrode pattern including a first auxiliary source electrode and a first auxiliary drain electrode respectively through two patterning processes; forming a second thin film transistor including forming a second source electrode and a second drain electrode through one patterning process. The second electrode pattern, the second source electrode and the second drain electrode are formed in the same patterning process, the first electrode pattern is connected with the first semiconductor pattern.

An electro-optical device includes a translucent substrate, a transistor, a light-shielding body having light-shielding properties, including a metal and disposed between the substrate and the transistor, a first insulating layer having insulating properties and disposed between the light-shielding body and the transistor, the first insulating layer being in contact with the light-shielding body, and a second insulating layer having insulating properties and disposed between the first insulating layer and the transistor, the second insulating layer being in contact with the first insulating layer. A content of a predetermined element that is not an element of a main component in the first insulating layer is higher than a content of the predetermined element in the second insulating layer.

A display panel includes: a base substrate; a circuit layer on the base substrate; and a display element layer on the circuit layer, wherein the circuit layer includes an active layer on the base substrate and containing boron and fluorine; a control electrode on the active layer; and a control electrode insulation layer between the active layer and the control electrode, wherein the active layer includes: a core layer in which a concentration of the boron is greater than a concentration of the fluorine; and a surface layer on the core layer and in which a concentration of the fluorine is greater than a concentration of the boron.

Disclosed are a substrate, a method for manufacturing the substrate, and a display panel. The substrate includes a base, an active switch, an active light-emitting pixel array, and a reflective layer. The active switch is formed on the base. The reflective layer is formed on the base under the active switch and is disposed farther away from a light incident surface of the substrate than the active switch. The active light-emitting pixel array is coupled with the active switch. The active switch includes a polysilicon layer. The reflective layer totally covers the base and the reflective layer has a smooth surface.

According to one embodiment, a thin-film transistor includes a polycrystalline semiconductor layer, a gate electrode opposing the polycrystalline semiconductor layer, a gate insulating film provided between the gate electrode and the polycrystalline semiconductor layer and in contact with the gate electrode, and an amorphous layer provided between the gate insulating film and the polycrystalline semiconductor layer, and in contact with the gate insulating film and the polycrystalline semiconductor layer.

The present invention provides a manufacture method of a TFT substrate structure and a TFT substrate structure. In the manufacture method of the TFT substrate structure, as manufacturing the gate, a plurality of metal sections distributed in spaces are formed at two sides of the gate, and the gate and the plurality of metal sections are employed to be a mask to implement ion implantation to the polysilicon layer. In the TFT substrate structure according to the present invention, the undoped areas are formed among the n-type heavy doping areas while forming the n-type heavy doping areas at the polysilicon layer.

An array substrate and a manufacturing method thereof are provided. The method has steps of: forming a buffer layer, a light-shading layer, and a whole semiconductor layer on a substrate; simultaneously patterning the semiconductor layer and the light-shading layer; and forming a first insulation layer, a first metal layer, a second insulation layer, a second metal layer, a flat layer, and a first transparent conductive layer on the patterned semiconductor layer.

The present disclosure relates to an array substrate and the manufacturing method thereof. The array substrate includes a glass substrate. The shading metal layer and the buffering layer are formed on the glass substrate in sequence. The TFT layer is formed on the buffering layer, and the TFT is arranged above the shading metal layer. The insulation layer and the organic layer are formed on the TFT layer in sequence. In addition, the pixel electrode layer connects to the source/drain of the TFT via the first through hole. The touch electrode layer connects to the shading metal layer via the second through hole. The passivation layer is configured between the pixel electrode layer and the touch electrode layer. In this way, the manufacturing process is simplified, and the coupling capacitance between the touch electrode and the signal line may be effectively reduced.

The present invention provides a manufacture method of a Low Temperature Poly-silicon TFT substrate and a Low Temperature Poly-silicon TFT substrate. In the manufacture method of the Low Temperature Poly-silicon TFT substrate according to the present invention, by employing the tilted ion beam to implement high dose ion implantation to the polysilicon layer to form the heavy doped area, and then employing the perpendicular ion beam to implement low dose ion implantation to the polysilicon layer to form the light doped area, the thin film transistor having the single side LDD area can be easily manufactured, and thus to diminish the hot carrier effect and electrical leakage of the thin film transistor for simplifying the manufacture process and lowering the manufacture cost.