Patent classifications
H01L2224/29264
Assembly and semiconductor device
Provided is a joined body including: a first member; a second member; and a sintered metal layer that joins the first member and the second member. The sintered metal layer includes a structure that is derived from flake-shaped copper particles which are oriented in approximately parallel to an interface between the first member or the second member, and the sintered metal layer, and the amount of copper contained in the sintered metal layer is 65% by volume or greater on the basis of a volume of the sintered metal layer.
SINTERED MATERIAL, CONNECTION STRUCTURE, COMPOSITE PARTICLE, JOINING COMPOSITION, AND METHOD FOR MANUFACTURING SINTERED MATERIAL
Provided are a sintered material excellent in both thermal stress and bonding strength; a connection structure comprising the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material comprises a base portion, one or more buffer portions, and one or more filling portions. The buffer portions and the filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from at least one of a pore and a material that is not the same as that of the sintered body, and each filling portion is formed from at least one of particles and fibers. The sintered material satisfies A>B, where A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material, and B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.
SINTERED MATERIAL, CONNECTION STRUCTURE, COMPOSITE PARTICLE, JOINING COMPOSITION, AND METHOD FOR MANUFACTURING SINTERED MATERIAL
Provided are a sintered material excellent in both thermal stress and bonding strength; a connection structure comprising the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material comprises a base portion, one or more buffer portions, and one or more filling portions. The buffer portions and the filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from at least one of a pore and a material that is not the same as that of the sintered body, and each filling portion is formed from at least one of particles and fibers. The sintered material satisfies A>B, where A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material, and B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.
METALLIC SINTERED BONDING BODY AND DIE BONDING METHOD
A metal sintered bonding body bonds a substrate and a die. In the metal sintered bonding body, at least a center part and corner part of a rectangular region where the metal sintered bonding body faces the die have a low-porosity region whose porosity is lower than an average porosity of the rectangular region. The low-porosity region is located within a strip-shaped region whose central lines are diagonal lines of the rectangular region.
IMAGE DISPLAY DEVICE
Provided is an image display device including a micro light emission element that is connected onto a drive circuit substrate incorporating a drive circuit of the micro light emission element. The micro light emission elements has a light emission surface on an opposite side to a bonding surface with the drive circuit, at least one of a surface on a connecting surface side of the micro light emission element and a surface on a connecting surface side of the drive circuit substrate has a protrusion portion and a recess portion, an electrode of the micro light emission element and an electrode of the drive circuit substrate side are connected to each other via a metal nanoparticle, and a space formed between the surface on the connecting surface side of the micro light emission element and a side of the surface on the connecting surface of the drive circuit substrate is filled with a photo-curing resin.
Sintered material, connection structure, composite particle, joining composition, and method for manufacturing sintered material
A sintered material excellent in thermal stress and bonding strength; a connection structure containing the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material has a base portion, buffer portions, and filling portions. The buffer portions and filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from a pore and/or material that is not the same as the sintered body, and each filling portion is formed from particles and/or fibers. The sintered material satisfies A>B. A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material. B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.
Sintered material, connection structure, composite particle, joining composition, and method for manufacturing sintered material
A sintered material excellent in thermal stress and bonding strength; a connection structure containing the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material has a base portion, buffer portions, and filling portions. The buffer portions and filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from a pore and/or material that is not the same as the sintered body, and each filling portion is formed from particles and/or fibers. The sintered material satisfies A>B. A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material. B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.
ELECTROCONDUCTIVE FILM, ROLL, CONNECTED STRUCTURE, AND PROCESS FOR PRODUCING CONNECTED STRUCTURE
A conductive film includes an elongated release film and a plurality of conductive adhesive film pieces provided on the release film. Then, the plurality of adhesive film pieces are arranged in a longitudinal direction X of the release film. For this reason, the adhesive film piece can be set to an arbitrary shape. Accordingly, it is possible to attach the adhesive film piece to adhesive surfaces having various shapes and to efficiently use the adhesive film piece.
SINTERING PASTES WITH HIGH METAL LOADING FOR SEMICONDUCTOR DIE ATTACH APPLICATIONS
A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt % of a mixture of metal particles comprising 30-70 wt % of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature T1, and 25-70 wt % of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature T1, wherein the ratio of wt % of M to wt % of Y is at least 1.0; (b) 0-30 wt % of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt % of a non-volatile portion.
ASSEMBLY AND SEMICONDUCTOR DEVICE
Provided is a joined body including: a first member; a second member; and a sintered metal layer that joins the first member and the second member. The sintered metal layer includes a structure that is derived from flake-shaped copper particles which are oriented in approximately parallel to an interface between the first member or the second member, and the sintered metal layer, and the amount of copper contained in the sintered metal layer is 65% by volume or greater on the basis of a volume of the sintered metal layer.