Embodiments disclosed herein include a particle collection trap for an abatement system for abating compounds produced in semiconductor processes. The particle collection trap includes a device for producing spiral gas flow in the particle collection trap. The spiral gas flow causes particles, which are heavier than the gas, to travel to the outside diameter of the flow path where the gas velocity is slower and to drop out of the gas stream. The device may be a spiral member coupled to a hollow tube or a rolled member having an inner portion coupled to a hollow tube. The particle collection trap increases the accumulation rate of particles in the gas stream without reducing the velocity of the gas flow.

A vacuum pumping line plasma source is provided. The plasma source includes a body defining a generally cylindrical interior volume extending along a central longitudinal axis. The body has an input port for coupling to an input pumping line, an output port for coupling to an output pumping line, and an interior surface disposed about the generally cylindrical interior volume. The plasma source also includes a supply electrode disposed adjacent to a return electrode, and a barrier dielectric member, a least a portion of which is positioned between the supply electrode and the return electrode. The plasma source further includes a dielectric barrier discharge structure formed from the supply electrode, the return electrode, and the barrier dielectric member. The dielectric barrier discharge structure is adapted to generate a plasma in the generally cylindrical interior volume.

Calcium hydroxide-containing compositions can be manufactured by slaking quicklime, and subsequently drying and milling the slaked product. The resulting calcium hydroxide-containing composition can have a size, steepness, pore volume, and/or other features that render the compositions suitable for treatment of exhaust gases and/or removal of contaminants. In some embodiments, the calcium hydroxide-containing compositions can include a D.sub.10 from about 0.5 microns to about 4 microns, a D.sub.90 less than about 30 microns, and a ratio of D.sub.90 to D.sub.10 less than 20, wherein individual particles include a surface area greater than or equal to about 25 m.sup.2/g.

Provided is an exhaust gas treatment apparatus that treats exhaust gas generated from semiconductor process and directed to a vacuum pump. Exhaust gas treatment apparatus includes a plasma generating unit for generating plasma, a reaction chamber in which perfluoride is decomposed by the plasma to generate a decomposition gas, and gas supplying unit for supplying the decomposition gas from the reaction chamber to a processing chamber in which the exhaust gas from the semiconductor process is introduced and treated exhaust gas is discharged to the vacuum pump. Decomposition gas reacts with the exhaust gas in the processing chamber to suppress generation of salt in solid state by a component of the exhaust gas.

A cleaning apparatus for a vacuum exhaust system capable of preventing redeposition of deposits on a downstream side of a vacuum pump is provided. A cold trap capable of causing deposits to be formed by cooling gas containing a sublimation component, at least one first vacuum pump disposed upstream of the cold trap, at least one first piping connecting the first vacuum pump to the cold trap, at least one second vacuum pump disposed downstream of the cold trap, and at least one second piping connecting the second vacuum pump to the cold trap are provided. At least a part of the first vacuum pump or the first piping is configured to be heated to higher than or equal to a sublimation temperature of the sublimation component. The cold trap is configured to be cooled to less than or equal to the sublimation temperature of the sublimation component.

There is provided a dielectric barrier electrical discharge apparatus, system and method. The apparatus comprises at least two electrodes arranged in use to provide at least one anode and at least one cathode an electric field thereby being establishable therebetween, the at least two electrodes being separated to allow a fluid to be present between the electrodes in use. At least one of the electrodes has a dielectric portion connected to at least part of said electrode, and a sub-macroscopic structure is connected to at least one of the electrodes or dielectric portion.

Disclosed is a production device and production method of electronic grade hydrofluoric acid. The method includes vaporizing the raw material industrial anhydrous hydrogen fluoride by an evaporator, transporting the vaporized hydrogen fluoride to a purification tower, obtaining a high purity hydrogen fluoride gas through rectification, transporting the high purity hydrogen fluoride gas to an absorption tower for absorption by a certain concentration of hydrofluoric acid in the liquid phase, obtaining the crude electronic grade hydrofluoric acid, and obtaining the electronic grade hydrofluoric acid product through ultrapure filtration. The disclosure overcomes the technical problems of small yield and low purity of the prior art. The production process meets the requirements of environmental protection. The disclosure is suitable for industrialized large-scale production.

The following phenomenon occurring in a fluororesin membrane material using, as its main material, a PTFE having a photocatalyst layer on a surface thereof is prevented: the surface of the membrane material is contaminated after the lapse of some years from the start of its use. A photocatalyst layer arranged on the PTFE layer of a Type A membrane material is formed of a photocatalyst and fluororesins, and the fluororesins are formed of at least one of a FEP or a PFA, and a PTFE. Here, the amount of the PTFE is preferably larger than that of at least one of the FEP or the PFA, and the weight of the photocatalyst is preferably 40% or less with respect to the total weight of the photocatalyst and the fluororesins.

The subject of the invention is a method and device for reducing contamination in a plasma reactor, especially contamination by lubricants, particularly for plasma processing of materials. The method is based on the fact that the contaminated gas pumped out of at least one reduced pressure vacuum chamber in the form of a plasma lamp (LA.sub.1, LA.sub.2, LA.sub.3) is purified in at least one purifying plasma lamp (LA.sub.01, LA.sub.02, LA.sub.H, LA.sub.E), in which a glow discharge is initiated between the anodes of the purifying plasma lamp (A01, A02) and the cathodes of the purifying plasma lamp (K.sub.01, K.sub.02), favorably particles of lubricants are cracked and partially polymerized, while processed heavy particles of lubricants are collected in a buffer tank (ZB) and then discharged outside the pumping system. The device contains at least one reduced pressure vacuum chamber in the form of a plasma lamp (LA.sub.1, LA.sub.2, LA.sub.3), it is connected to at least one purifying plasma lamp (LA.sub.01, LA.sub.02, LA.sub.H, LA.sub.E) with a buffer tank (ZB) connected to a vacuum pump (PP). The vacuum tube connecting the plasma lamps (LA.sub.1, LA.sub.2, LA.sub.3) with the purifying plasma lamp (LA.sub.01, LA.sub.02, LA.sub.H, LA.sub.E)) is equipped with a dosing valve (V) for the gaseous admixture medium (MD) to plasma lamps (LA.sub.1, LA.sub.2, LA.sub.3), from which radiation (R.sub.1, R.sub.2, R.sub.3) is directed to the processed material (OM).

A kit of parts for forming a foreline for coupling a process chamber to a vacuum pumping and/or abatement system, the kit comprising: a plurality of foreline segments; wherein each foreline segment is a pipe that comprises: a first substantially straight end portion; a second substantially straight end portion opposite to the first end portion; and an intermediate portion disposed between the first and second end portions and connected to the first and second end portions by respective bends; the first and second end portions are substantially parallel to each other; the intermediate portion is oblique to the first and second end portions; and the foreline segments are configured to be attached together so as to form a continuous foreline.