A multilayer semiconductor device includes first wirings extending in a first direction adjacent to each other in a second direction. Dummy wirings are arranged between the first wirings and a second wiring at crossing points between first virtual linear lines extending in a third direction and second virtual linear lines extending in a fourth direction. The dummy wirings have a first dummy wiring, a second dummy wiring, a third dummy wiring, a fourth dummy wiring, and a fifth dummy wiring. When the dummy wirings are rotated around a center of the first dummy wiring through 90 degrees, centers of the second, third, fourth, and fifth dummy wirings are aligned with centers of the fourth, fifth, third, and second dummy wirings prior to being rotated.

A multilayer semiconductor device includes first wirings extending in a first direction and arranged adjacent to each other in a second direction. Dummy wirings are arranged between the first wirings and the second wiring at crossing points between first virtual linear lines extending in a third direction and second virtual linear lines extending in a fourth direction. The third and fourth directions are neither parallel nor orthogonal to the first and second directions. The dummy wirings have a first, a second, and a third dummy wiring. Centers of the second and third dummy wirings are nearest to a center of the first dummy wiring relative to others of the dummy wirings. The respective centers of the first, second, and third dummy wirings are aligned on a third virtual linear line extending in a fifth direction neither parallel to nor perpendicular to the first and second directions.