A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

A method for producing a liquid transport apparatus is disclosed. The liquid transport apparatus includes a pressure chamber plate, a ceramics layer formed on a surface of the pressure chamber plate, a piezoelectric layer formed on the ceramics layer, and an electrode formed on the piezoelectric layer. The ceramics layer is formed by heating an insulating ceramic material at a temperature lower than an annealing temperature of the piezoelectric layer. Accordingly, the atoms of the pressure chamber plate are suppressed from being diffused into the piezoelectric layer.

A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing method are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film of this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

A bulk acoustic wave resonator and a method of manufacturing the same are provided. The bulk acoustic wave resonator includes: a first carrier substrate; a barrier layer on a main surface of the first carrier substrate and configured to prevent an undesired conductive channel from being generated due to charge accumulation on the main surface; a buffer layer on a side of the barrier layer away from the first carrier substrate; a piezoelectric layer on a side of the buffer layer away from the barrier layer; a first electrode and a second electrode on opposite sides of the piezoelectric layer; a first passivation layer and a second passivation layer, respectively covering sidewalls of the first electrode and the second electrode; a dielectric layer between the first passivation layer and the buffer layer, wherein a first cavity is provided between the first passivation layer and the dielectric layer.

A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.

An integrated circuit film bulk acoustic resonator (FBAR) device having multiple resonator thicknesses is formed on a common substrate in a stacked configuration. In an embodiment, a seed layer is deposited on a substrate, and one or more multi-layer stacks are deposited on the seed layer, each multi-layer stack having a first metal layer deposited on a first sacrificial layer, and a second metal layer deposited on a second sacrificial layer. The second sacrificial layer can be removed and the resulting space is filled in with a piezoelectric material, and the first sacrificial layer can be removed to release the piezoelectric material from the substrate and suspend the piezoelectric material above the substrate. More than one multi-layer stack can be added, each having a unique resonant frequency. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate.

A wafer level ultrasonic chip module includes a substrate, a composite layer and a base material. The substrate has a through slot passing through an upper surface and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The composite layer has a groove passing through an upper surface and a lower surface of the protective layer, and communicating with the through slot. The ultrasonic body corresponds to the through slot. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

A thin-film bulk acoustic resonator (FBAR) apparatus includes a lower dielectric layer including a first cavity; an upper dielectric layer including a second cavity, wherein the upper dielectric layer is on the lower dielectric layer; and an acoustic resonance film that is positioned between and separating the first and the second cavities. The acoustic resonance film includes a lower electrode layer, an upper electrode layer, and a piezoelectric film that is sandwiched between the lower and upper electrode layers. A plan view of the first and the second cavities overlap to form an overlapped region having a polygonal shape without parallel sides.

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.