Y10T29/43

Piezoelectric material, piezoelectric element, method for manufacturing piezoelectric element, and electronic device

The present invention can provide a lead-free piezoelectric material having a high piezoelectric constant in the room temperature range. The present invention for this purpose is a piezoelectric material including a main component containing a perovskite metal oxide represented by following general formula (1),
Ba.sub.a(Ti.sub.1-xZr.sub.x)O.sub.3(1)
where 0.02x0.13 and 0.986a1.02, a first auxiliary component containing Mn, and a second auxiliary component containing trivalent Bi, wherein an amount of the contained Mn is 0.0020 moles or more and 0.0150 moles or less relative to 1 mole of the metal oxide, and an amount of the contained Bi is 0.00042 moles or more and 0.00850 moles or less relative to 1 mole of the metal oxide.

Piezoelectric transducer, ultrasonic probe, and piezoelectric transducer manufacturing method

According to embodiment, a piezoelectric transducer includes a polarized single crystal piezoelectric body comprising a lead complex perovskite compound containing niobium oxide and at least one of magnesium oxide and indium oxide and including a first plane whose crystal orientation is [100] and a second plane which faces the first plane and whose crystal orientation is [100], and first electrode provided on the first plane side of the body and a second electrode provided on the second plane side of the body. A ratio of a second FWHM of diffracted X-rays at the Miller index (400) of the body to a first FWHM of diffracted X-rays at the miller index (400) of the body which is unpolarized or has undergone depolarization processing is not less than 0.22 and not more than 0.4.

TEMPERATURE-COMPENSATED MICRO-ELECTROMECHANICAL DEVICE, AND METHOD OF TEMPERATURE COMPENSATION IN A MICRO-ELECTROMECHANICAL DEVICE
20180118561 · 2018-05-03 ·

A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.

RF and/or RF identification tag/device having an integrated interposer, and methods for making and using the same

A MOS RF surveillance and/or identification tag, and methods for its manufacture and use. The tag generally includes an interposer, an antenna and/or inductor on the interposer, and integrated circuitry on the interposer in a location other than the antenna and/or inductor. The integrated circuitry generally has a lowest layer in physical contact with the interposer surface. The method of manufacture generally includes forming a lowest layer of integrated circuitry on an interposer, forming successive layers of the integrated circuitry on the lowest layer of integrated circuitry, and attaching an electrically conductive functional layer to the interposer. Alternatively, an electrically conductive structure may be formed from a functional layer attached to the interposer. The method of use generally includes causing and/or inducing a current in the present tag sufficient for it to generate, reflect or modulate a detectable electromagnetic signal, detecting the signal, and optionally, processing information conveyed by the detectable electromagnetic signal. The present invention advantageously provides a low cost RFID tag capable of operating at MHz frequencies that can be manufactured in a shorter time period than conventional RFID tags that manufacture all active electrical devices on a conventional wafer.

Structure and methods of forming the structure
09941053 · 2018-04-10 · ·

Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.

Aligning device and method for producing electronic component using the aligning device

In an aligning device, in plan view, a first recess of a first transfer jig allows an entire region of a second recess of the first transfer jig to be situated within the first recess of the first transfer jig by a predetermined interval. When the first transfer jig and the second transfer jig overlap each other, the first recess of the second transfer jig allows the entire region of the second recess of the first transfer jig to be situated within the first recess of the second transfer jig by a predetermined interval. With the alignment object being transferred into a cavity of the first transfer jig, by causing the first transfer jig and the second transfer jig to overlap each other, the alignment object is transferred from the cavity of the first transfer jig to a cavity of the second transfer jig.

Synthesis of three-dimensional graphene foam: use as supercapacitors

The invention relates to three-dimensional crystalline foams with high surface areas, high lithium capacity, and high conductivity for use as electrode materials and methods for their fabrication. In additional embodiments, the invention also relates to the use of three-dimensional crystalline foams as supercapacitors for improved charge and energy storage.

Manufacturing method for laminated electronic component
09922765 · 2018-03-20 · ·

In a method of manufacturing a laminated electronic component, in a step of obtaining a laminate, a position of a second green sheet with respect to a first green sheet is determined such that an overall width of a first portion printed on the first green sheet and a second portion printed on the second green sheet becomes substantially equal to a width of the first portion or a width of the second portion.

Electrical connection device comprising connection elements with controllable position

Electrical connection device comprising at least one substrate and one or several first electrical connection elements located on a front face of the electrical connection device such that they can be coupled to contact pads of an electronic device to which the electrical connection device is intended to be connected, each first electrical connection element comprising: at least one support, of which at least one first end is anchored to the substrate such that part of the support is suspended above the front face, the support comprising at least a portion of piezoelectric material located between two electrodes and capable of moving said part of the support in two directions approximately perpendicular to the front face depending on a value of an electrical voltage intended to be applied onto the electrodes; at least one electrical conducting element located on said part of the support.

COMPOSITE SHEET, MULTILAYER CERAMIC ELECTRONIC COMPONENT, AND METHOD FOR MANUFACTURING THE MULTILAYER CERAMIC ELECTRONIC COMPONENT
20180068789 · 2018-03-08 ·

A composite sheet includes a ceramic green sheet having a lengthwise direction and a conductor film printed on the ceramic green sheet. The conductor film has a shape that has a longitudinal dimension extending in the lengthwise direction and a lateral dimension perpendicular or substantially perpendicular to the longitudinal direction. The conductor film includes a plurality of thickness-varied regions arranged in a row or a plurality of rows extending in the lengthwise direction while being dispersed in the lengthwise direction. The thickness-varied regions have a thickness that is different from a thickness of a portion of the conductor film excluding the thickness-varied regions.