The present disclosure, in some embodiments, relates to a debonding and cleaning apparatus. The apparatus has a debonding module configured to separate semiconductor substrates from carrier substrates. A first cleaning module is configured to clean surfaces of a first plurality of the semiconductor substrates and a second cleaning module is configured to clean surfaces of a second plurality of the semiconductor substrates. The apparatus also has a first substrate handling module including a first robotic arm in communication with the debonding module and a second substrate handling module including a second robotic arm that is located between the first cleaning module and the second cleaning module. The second substrate handling module is configured to transfer the first plurality of the semiconductor substrates to first cleaning module and to transfer the second plurality of the semiconductor substrates to the second cleaning module.

A method of manufacturing a delaminatable container is provided that is capable of uniformly delaminating the inner bag from the outer shell. According to the first aspect, a container body is formed having an outer shell and an inner bag. The inner bag preliminary delaminated from the outer shell in an entire circumference of a storage portion of the container body by rotating the container body while pressing the storage portion with a pressing mechanism from outside for compression or by moving the pressing mechanism along an outer circumference of the container body.

A method of recycling a solar cell module includes an enclosing layer that encloses a solar cell therein, a light-receiving surface layer laminated on one surface of the enclosing layer, and a back sheet laminated on the other surface of the enclosing layer, the method including: a first removing step of mechanically removing the back sheet; a second removing step of mechanically removing from a side on which the back sheet is removed the entire solar cell and the enclosing layer to such a depth that a part of the enclosing layer having a predetermined thickness remains on the light-receiving surface layer, after the first removing step; and a third removing step of removing the part of the enclosing layer remaining on the light-receiving surface layer by immersion in a solution that causes swelling of the enclosing layer, after the second removing step, thereby improving an overall efficiency.

A wafer debonding and cleaning apparatus comprises a wafer debonding module configured to separate a semiconductor wafer from a carrier wafer. The wafer debonding and cleaning apparatus also comprises a first wafer cleaning module configured perform a first cleaning process to clean a surface of the semiconductor wafer. The wafer debonding and cleaning apparatus further comprises an automatic wafer handling module configured to transfer the semiconductor wafer from one of the wafer debonding module or the first wafer cleaning module to the other of the wafer debonding module or the first wafer cleaning module. The semiconductor wafer has a thickness ranging from about 0.20 m to about 3 mm.

The disclosed technology generally relates to preparing two-dimensional material layers, and more particularly to releasing a graphene layer from a template substrate. According to an aspect, a method of releasing a graphene layer includes providing a template substrate on which the graphene layer is provided, the method comprising: subjecting the graphene layer and the template substrate to a water treatment by soaking the graphene layer and the template substrate in water such that water is intercalated between the template substrate and the graphene layer; and subjecting the graphene layer and the template substrate to a delamination process, thereby releasing the graphene layer from the template substrate.

The apparatus includes an operating unit, which can be a welding unit for welding a closing film to an edge zone of a containing element or a separating unit for separating containing elements from portions of sheet material. The apparatus includes a control unit programmed to enable the operating unit to selectively process a continuous strip of containing elements or discrete groups of containing elements.

Some embodiments are directed to techniques for building single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while others use an intervening adhesion layer material. Some embodiments use different seed layer and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while others apply the materials in blanket fashion. Some embodiments remove extraneous material via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

Certain example embodiments relate to methods for low temperature direct graphene growth on glass, and/or associated articles/devices. In certain example embodiments, a glass substrate has a layer including Ni formed thereon. The layer including Ni has a stress pre-engineered through the implantation of He therein. It also may be preconditioned via annealing and/or the like. A remote plasma-assisted chemical vapor deposition technique is used to form graphene both above and below the Ni-inclusive film. The Ni-inclusive film and the top graphene may be removed via tape and/or the like, leaving graphene on the substrate. Optionally, a silicon-inclusive layer may be formed between the Ni-inclusive layer and the substrate. Products including such articles, and/or methods of making the same, also are contemplated.

A process is disclosed for using two polymeric bonding material layers to bond a device wafer and carrier wafer in a way that allows debonding to occur between the two layers under low-force conditions at room temperature. Optionally, a third layer is included at the interface between the two layers of polymeric bonding material to facilitate the debonding at this interface. This process can potentially improve bond line stability during backside processing of temporarily bonded wafers, simplify the preparation of bonded wafers by eliminating the need for specialized release layers, and reduce wafer cleaning time and chemical consumption after debonding.

A separation apparatus for separating a superposed substrate in which a processing target substrate and a supporting substrate are joined together with an adhesive, into the processing target substrate and the supporting substrate, includes: a first holding unit which holds the processing target substrate; a second holding unit which holds the supporting substrate; a moving mechanism which relatively moves the first holding unit or the second holding unit in a horizontal direction; a load measurement unit which measures a load acting on the processing target substrate and the supporting substrate when the processing target substrate and the supporting substrate are separated; and a control unit which controls the moving mechanism based on the load measured by the load measurement unit.