A label affixing machine includes a holder, a storing device, a storing device, a peeling device and a conveyer. The storing device, the peeling device and the conveyer are fixed in position on the holder. The picking device is coupled to the conveyer. The label includes a bottom board affixed under the label, the label affixing machine configured to affix the label on an object. The picking device is configured for picking the label. The peeling device includes a second fixing module fixed in position on the holder, a second moving module coupled to the second fixing module and a robotic arm fixed in position on the second moving module. The robotic arm is configured for clamping the bottom board and peeling the bottom board from the label. The conveyer moves the picking device and affixes the label on the object.

A peeling device which peels a superposed substrate obtained by bonding a first substrate and a second substrate together, from one end portion of the superposed substrate toward the other end portion thereof, includes a first holding unit configured to hold the first substrate of the superposed substrate, a second holding unit configured to hold the second substrate of the superposed substrate, and a moving unit configured to move the first holding unit away from the second holding unit. The moving unit is configured to move in at least a peeling direction of the superposed substrate.

A peeling device separates a superposed substrate, in which a target substrate and a support substrate are joined to each other with an adhesive, into the target substrate and the support substrate. The peeling device includes a holding unit configured to hold the superposed substrate, and a plurality of position adjustment units movable forward and backward with respect to a side surface of the superposed substrate held in the holding unit, and the position adjustment unit configured to perform a position adjustment of the superposed substrate by contacting the side surface of the superposed substrate.

Disclosed is a peeling system which includes a peeling device, a plurality of first cleaning devices, an inversion device, a second cleaning device, and first to third conveyance devices. The peeling device is configured to separate a superimposed substrate into a first substrate and a second substrate. The plurality of first cleaning devices is configured to clean a bonded surface of the first substrate. The inversion device configured to invert front and rear surfaces of the first substrate. The second cleaning device is configured to clean a non-bonded surface of the first substrate. Delivery positions of the first substrate in the plurality of first cleaning devices are arranged in a region where an operation range of the first conveyance device and an operation range of the second conveyance device overlap each other.

Methods and apparatuses for releasably attaching support members to microfeature workpieces to support members are disclosed herein. In one embodiment, for example, a method for processing a microfeature workpiece including a plurality of microelectronic dies comprises forming discrete blocks of material at a first side of a support member. The blocks are arranged on the support member in a predetermined pattern. The method also includes depositing an adhesive material into gaps between the individual blocks of material and placing a first side of the workpiece in contact with the adhesive material and/or the blocks. The method further includes cutting through a second side of the workpiece to singulate the dies and to expose at least a portion of the adhesive material in the gaps. The method then includes removing at least approximately all the adhesive material from the support member and/or the workpiece with a solvent.

Described methods and apparatus provide a controlled perturbation to an adhesive bond between a device wafer and a carrier wafer. The controlled perturbation, which can be mechanical, chemical, thermal, or radiative, facilitates the separation of the two wafers without damaging the device wafer. The controlled perturbation initiates a crack either within the adhesive joining the two wafers, at an interface within the adhesive layer (such as between a release layer and the adhesive), or at a wafer/adhesive interface. The crack can then be propagated using any of the foregoing methods, or combinations thereof, used to initiate the crack.

Certain example embodiments relate to methods for low temperature direct graphene growth on glass, and/or associated articles/devices. In certain example embodiments, a glass substrate has a layer including Ni formed thereon. The layer including Ni has a stress pre-engineered through the implantation of He therein. It also may be preconditioned via annealing and/or the like. A remote plasma-assisted chemical vapor deposition technique is used to form graphene both above and below the Ni-inclusive film. The Ni-inclusive film and the top graphene may be removed via tape and/or the like, leaving graphene on the substrate. Optionally, a silicon-inclusive layer may be formed between the Ni-inclusive layer and the substrate. Products including such articles, and/or methods of making the same, also are contemplated.

Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

A pick-and-place machine and method includes use of a passive component feeder cartridge including a feeder gear. Rotation of the feeder gear causes a component-bearing tape to be fed through the feeder cartridge. A pickup head includes a vacuum nozzle to pick up the components from the tape and a rack gear to engage and drive the feeder gear of the feeder cartridge via translational motion of the pickup head when operatively disposed with respect to a selected feeder cartridge.

A pick-and-place machine and method includes use of a passive component feeder cartridge including a feeder gear. Rotation of the feeder gear causes a component-bearing tape to be fed through the feeder cartridge. A pickup head includes a vacuum nozzle to pick up the components from the tape and a rack gear to engage and drive the feeder gear of the feeder cartridge via translational motion of the pickup head when operatively disposed with respect to a selected feeder cartridge.