A method of milling a piece of raw steel stock comprising: arranging a minimum of four solid pole extensions on top surface segments of a magnetic chuck such that the solid pole extensions are relatively evenly distributed under a piece of raw steel stock and within 2 inches of a perimeter of the piece of raw steel stock; arranging multiple mobile pole extensions beneath the piece of raw steel stock and on every other top surface segment of the magnetic chuck under the piece of raw steel stock that is not occupied by the solid pole extensions but beneath the piece of raw steel stock, each of the multiple mobile pole extensions having a biased top portion that contacts the piece of raw steel stock; and milling the piece of raw steel stock with a face mill that generates steel chip as swarf.

A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.

Disclosed are: an electrostatic chuck having a high volume resistivity so as to reduce a leakage current, thereby improving the adsorption and desorption response characteristics of a semiconductor wafer; and a manufacturing method therefor. The electrostatic chuck is a sintered body in which an electrode is impregnated so as to fix a semiconductor wafer by electrostatic force, and comprises alumina, a sintering aid, and a rare earth composite oxide comprising two to five different rare earth metals, has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E+16 Ω.Math.cm to 1.0E+17 Ω.Math.cm.

A method for the joining of ceramic pieces into an assembly adapted to be used in semiconductor processing. The joined pieces are adapted to withstand the environments within a process chamber during substrate processing, chamber cleaning processes, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The ceramic pieces may be aluminum nitride and the pieces may be brazed with aluminum. The joint material is adapted to withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The joint is adapted to provide a hermetic seal across the joint. The joined pieces are adapted to be separated at a later time should rework or replacement of one of the pieces be desired.

A wafer support device includes a susceptor, at least one lift pin, at least one lift pin support base and at least one pad. The susceptor has a bottom surface and a top surface configured to support a wafer. The susceptor has at least one through hole extending between the bottom surface and the top surface. The lift pin is at least partially telescopically received in the through hole of the susceptor. The lift pin support base has at least one coupling feature thereon. The pad is detachably coupled with the coupling feature and supports the lift pin.

The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting features formed on the substrate chucking surface, wherein the number of substrate supporting features increases radially from a center of the substrate chucking surface to an edge of the substrate chucking surface, and a seasoning layer formed on the plurality of the substrate supporting features, the seasoning layer comprising a silicon nitride.

The present disclosure generally relates to apparatuses and methods for controlling a plasma sheath near a substrate edge. The apparatus relates to a processing chamber and/or a substrate support that includes an edge ring assembly with an edge ring electrode and an electrostatic chuck with a chucking electrode. The edge ring assembly is positioned adjacent the electrostatic chuck, such as with the edge ring assembly positioned exterior to or about the electrostatic chuck. The edge ring assembly includes a base and a cap positioned above the base with the edge ring electrode positioned between the cap and the base. The base of the edge ring electrode may include an inner recess and/or an outer recess with the cap including one or more lips that extend into the inner recess and/or the outer recess. One or more silicon rings and/or insulating rings are positioned adjacent the edge ring assembly.

A plasma processing apparatus includes an electrostatic chuck and a lifter pin. The electrostatic chuck has a mounting surface on which a target object is mounted and a back surface opposite to the mounting surface, and a through hole formed through the mounting surface and the back surface. The lifter pin is at least partially formed of an insulating member and has a leading end accommodated in the through hole. The lifter pin vertically moves with respect to the mounting surface to vertically transfer the target object. A conductive material is provided at at least one of a leading end portion of the lifter pin which corresponds to the through hole and a wall surface of the through hole which faces the lifter pin.

An electrostatic chuck of an embodiment includes a base, a dielectric layer, and a chuck main body. The dielectric layer is provided on the base, and is fixed to the base. The chuck main body is mounted on the dielectric layer. The chuck main body has a ceramic main body, a first electrode, a second electrode, and a third electrode. The ceramic main body has a substrate mounting region. The first electrode is provided in the substrate mounting region. The second electrode and the third electrode form a bipolar electrode. The second electrode and the third electrode are provided in the ceramic main body, and are provided between the first electrode and the dielectric layer.

The present disclosure generally relates to apparatuses and methods for controlling a plasma sheath near a substrate edge. The apparatus relates to a processing chamber and/or a substrate support that includes an edge ring assembly with an edge ring electrode and an electrostatic chuck with a chucking electrode. The edge ring assembly is positioned adjacent the electrostatic chuck, such as with the edge ring assembly positioned exterior to or about the electrostatic chuck. The edge ring assembly includes a base and a cap positioned above the base with the edge ring electrode positioned between the cap and the base. The base of the edge ring electrode may include an inner recess and/or an outer recess with the cap including one or more lips that extend into the inner recess and/or the outer recess. One or more silicon rings and/or insulating rings are positioned adjacent the edge ring assembly.