A cooling pedestal for supporting a substrate, comprises a support structure having cooling conduits to flow a fluid therethrough to cool the substrate, and a contact surface comprising a coating of a diamond-like carbon. The coating comprises (i) a coefficient of friction of less than about 0.3, (ii) an average surface roughness of less than about 0.4 micrometers, and (iii) a microhardness of at least about 8 GPa.

A micro pick up array mount includes a pivot platform to allow a micro pick up array to automatically align with a carrier substrate. Deflection of the pivot platform may be detected to control further movement of the micro pick up array.

A plasma processing apparatus of processing a processing target object within a depressurized space is provided. The plasma processing apparatus includes a processing vessel that partitions a depressurizable space; a mounting table, provided within the processing vessel, having an electrostatic chuck which is for a focus ring and has three electrodes; a power supply configured to apply three AC voltages having different phases to the three electrodes, respectively, to adsorb a target object on the electrostatic chuck.

A plasma processing apparatus includes an electrostatic chuck and a lifter pin. The electrostatic chuck has a mounting surface on which a target object is mounted and a back surface opposite to the mounting surface, and a through hole formed through the mounting surface and the back surface. The lifter pin is at least partially formed of an insulating member and has a leading end accommodated in the through hole. The lifter pin vertically moves with respect to the mounting surface to vertically transfer the target object. A conductive material is provided at at least one of a leading end portion of the lifter pin which corresponds to the through hole and a wall surface of the through hole which faces the lifter pin.

In a substrate processing apparatus, a shield plate includes a first chucking magnetic material (441). The shield plate is moved up and down by a chamber opening-and-closing mechanism. A substrate holding part includes a movable chuck member (412) and a fixed chuck member. The movable chuck member (412) includes a second chucking magnetic material (442). When the shield plate is moved down, the shield plate comes in close proximity to the upper surface of a substrate (9), and the first chucking magnetic material (441) comes in close proximity to the second chucking magnetic material (442). The substrate (9) is held by magnetic action between the first chucking magnetic material (441) and the second chucking magnetic material (442). It is thus possible to hold the substrate (9) with a simple structure.

According to an aspect of an embodiment of the invention, there is provided an electrostatic chuck including: a ceramic dielectric substrate including a first major surface for mounting a clamped target, a second major surface on opposite side from the first major surface, and a through hole provided from the second major surface to the first major surface; a metallic base plate supporting the ceramic dielectric substrate and including a gas feed channel communicating with the through hole; and an insulator plug including a ceramic porous body provided in the gas feed channel and a ceramic insulating film provided between the ceramic porous body and the gas feed channel and being denser than the ceramic porous body, the ceramic insulating film biting into the ceramic porous body from a surface of the ceramic porous body.

A method of milling a piece of raw steel stock comprising: presenting a piece of raw steel stock having a first surface and a second surface having a perimeter; presenting a magnetic chuck with a top surface configured to support the piece of raw steel stock for milling with magnetic capabilities; arranging a minimum of four solid pole extensions on the top surface to support the second surface of the piece of raw steel stock for milling of the first surface thereof such that the solid pole extensions will be relatively evenly distributed beneath the perimeter of the second surface; arranging multiple mobile pole extensions on the top surface to further support the second surface; placing the second surface onto the multiple mobile pole extensions and the solid pole extensions; activating the magnetic capabilities of the magnetic chuck; and milling the first surface to a desired flatness.

A method of adsorbing a target object on a mounting table is provided. The mounting table is provided within a processing vessel that partitions a depressurizable space in a processing apparatus which processes a processing target object within the space. Further, the processing apparatus serves as a plasma processing apparatus. The method includes mounting the target object on an electrostatic chuck of the mounting table; and applying three AC voltages having different phases to three electrodes of the electrostatic chuck, respectively.

A fabrication system may generally comprise an x-y positioning assembly, a clamping head to receive an end effector, wherein the clamping head is coupled to the x-y positioning assembly, a z positioning assembly, a platform including a surface that is rigid and substantially planar, wherein the platform is coupled to the z positioning assembly, and a controller operably coupled to the x-y positioning assembly, end effector, z positioning assembly, and platform. Methods of using the fabrication system are also described.

In a substrate processing apparatus, a shield plate includes a first chucking magnetic material (441). The shield plate is moved up and down by a chamber opening-and-closing mechanism. A substrate holding part includes a movable chuck member (412) and a fixed chuck member. The movable chuck member (412) includes a second chucking magnetic material (442). When the shield plate is moved down, the shield plate comes in close proximity to the upper surface of a substrate (9), and the first chucking magnetic material (441) comes in close proximity to the second chucking magnetic material (442). The substrate (9) is held by magnetic action between the first chucking magnetic material (441) and the second chucking magnetic material (442). It is thus possible to hold the substrate (9) with a simple structure.