A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×10.sup.19/cm.sup.3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.

A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.

A solar cell includes a support substrate, a back electrode layer on the support substrate, a light absorbing layer on the back electrode layer, a buffer layer on the light absorbing layer, a high resistance buffer layer on the buffer layer, and a front electrode layer on the high resistance buffer layer. An insulating part is located on a top surface of the light absorbing layer. A method of fabricating the solar cell includes forming the back electrode layer on the substrate, forming the light absorbing layer on the back electrode layer, forming the buffer layer on the light absorbing layer, oxidizing a top surface of the buffer layer, and forming the front electrode layer on the buffer layer.

A homogeneous coating solution for forming a light-absorbing layer of a solar cell, the homogeneous solution including: at least one metal or metal compound selected from the group consisting of a group 11 metal, a group 13 metal, a group 11 metal compound and a group 13 metal compound; a Lewis base solvent; and a Lewis acid.

A method for manufacturing a large-area thin film solar cell includes the steps of: (a) forming a first contact layer on a substrate; (b) forming a multi-layer metal precursor film on the first contact layer, which includes the sub-steps of (b1) sputtering a first multinary metal precursor layer on the first contact layer, the first multinary metal precursor layer containing Cu, Ga and KF, and (b2) sputtering an In-containing precursor layer on the first multinary metal precursor layer; and (c) subjecting the multi-layer metal precursor film to selenization to form an absorber layer having a chalcopyrite phase.

A transportable process box for processing substrates coated on one side is described. The box has a base for the placement of a first substrate in a manner such that the latter is supported over the full area, a frame, a cover which is placed onto the frame, and an intermediate element which is arranged between the base and the cover and is intended for the placement of a second substrate in a manner such that the latter is supported over the full area. Arrangements and methods for processing substrates are also described.

Disclosed herein is a quantum dot composite that can maintain luminous efficiency per unit quantum dot even when a quantum dot concentration is high, and therefore can achieve a high emission intensity. The quantum dot composite includes: a matrix; and quantum dots dispersed in the matrix, wherein the matrix is composed of cellulose acetate having a compositional distribution index (CDI) of 3.0 or less, and a concentration of the quantum dots is 0.05 wt % or higher.

A photovoltaic device includes one or more features that taken alone or in combination enhance its efficiency. Some embodiments may comprise a tandem solar device in which a top PV cell is fabricated upon a front transparent substrate, that also serves as the top encapsulating substance. The top PV cell including the front encapsulating substance is then bonded (e.g., using adhesive) to a bottom PV cell in order to complete the tandem device. Using the same transparent, insulating element as both front encapsulating substance and a substrate for fabricating the top PV cell, obviates to the need to provide a separate structure (with resulting interfaces) to perform the latter role. For tandem and non-tandem PV devices, a Through-Substrate-Via (TSV) structure may extend through an insulating substrate in order to provide contact with an opposite side (e.g., back electrode). Embodiments may find particular use in fabricating shingled perovskite photovoltaic solar cells.

Disclosed are metal chalcogenide nanoparticles forming a light absorption layer of solar cells including a first phase including copper (Cu)-tin (Sn) chalcogenide and a second phase including zinc (Zn) chalcogenide, and a method of preparing the same.

Disclosed are a precursor for preparing a light absorption layer of a solar cell including (a) an aggregate-phase composite including a first phase including a copper (Cu)-tin (Sn) bimetallic metal and a second phase including zinc (Zn)-containing chalcogenide, or including the first phase including a copper (Cu)-tin (Sn) bimetallic metal, the second phase including zinc (Zn)-containing chalcogenide and a third phase including copper (Cu)-containing chalcogenide; or (b) core-shell structured nanoparticles including a core including copper (Cu)-tin (Sn) bimetallic metal nanoparticles and a shell including zinc (Zn)-containing chalcogenide, or the zinc (Zn)-containing chalcogenide and copper (Cu)-containing chalcogenide; or (c) a mixture thereof, and a method of preparing the same.