In an embodiment, a photodetector is provided that provides a sensitizing medium adapted to receive electromagnetic radiation creating a junction with a transport channel, wherein the transport channel is adapted to exhibit a change in conductivity in response to reception of electromagnetic radiation by the sensitizing medium.

A solar cell and a photovoltaic module including the solar cell. The solar cell includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a first dielectric layer located on the first surface; a first N+ doped layer located on a surface of the first dielectric layer; a first passivation layer located on a surface of the first N+ doped layer; a first electrode located on a surface of the first passivation layer; a second dielectric layer located on the second surface; a first P+ doped layer located on a surface of the second dielectric layer; a second passivation layer located on a surface of the first P+ doped layer; and a second electrode located on a surface of the second passivation layer.

Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.

Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

A system and a method for producing silicon from a SiO.sub.2-containing material that includes solid SiO.sub.2. The method uses a reaction vessel including a first section and a second section in fluid communication with said first section. The method includes: heating the SiO.sub.2-containing material that includes the solid SiO.sub.2 to a SiO.sub.2-containing material that includes liquid SiO.sub.2, at a sufficient temperature to convert the solid SiO.sub.2 into the liquid SiO.sub.2; converting, in the first section, the liquid SiO.sub.2 into gaseous SiO.sub.2 that flows to the second section by reducing the pressure in the reaction vessel to a subatmospheric pressure; and reducing, in the second section, the gaseous SiO.sub.2 into liquid silicon using a reducing gas. The reducing of the pressure is performed over a continuous range of interim pressure(s) sufficient to evaporate contaminants from the SiO.sub.2-containing material, and removing by vacuum, the one or more evaporated gaseous contaminants.

A solar cell and a photovoltaic module including the solar cell. The solar cell includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a first dielectric layer located on the first surface; a first N+ doped layer located on a surface of the first dielectric layer; a first passivation layer located on a surface of the first N+ doped layer; a first electrode located on a surface of the first passivation layer; a second dielectric layer located on the second surface; a first P+ doped layer located on a surface of the second dielectric layer; a second passivation layer located on a surface of the first P+ doped layer; and a second electrode located on a surface of the second passivation layer.

An ingot having a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface and the second surface in a first direction includes a first mono-like crystalline portion, a first intermediate portion including a mono-like crystalline section, a second mono-like crystalline portion, a second intermediate portion including a mono-like crystalline section, and a third mono-like crystalline portion. The first mono-like crystalline portion, the first intermediate portion, and the second mono-like crystalline portion are adjacent to one another in sequence in a second direction perpendicular to the first direction. The first mono-like crystalline portion, the second intermediate portion, and the third mono-like crystalline portion are adjacent to one another in sequence in a third direction perpendicular to the first direction and crossing the second direction. The first mono-like crystalline portion and the second mono-like crystalline portion have a greater width than the first intermediate portion in the second direction. The first mono-like crystalline portion and the third mono-like crystalline portion have a greater width than the second intermediate portion in the third direction. Boundaries between the first mono-like crystalline portion and the first intermediate portion and between the second mono-like crystalline portion and the first intermediate portion, and boundaries between the first mono-like crystalline portion and the second intermediate portion and between the third mono-like crystalline portion and the second intermediate portion each include a coincidence boundary.

Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

An avalanche photodiode (APD) sensor includes a photoelectric conversion region disposed in a substrate and that converts light incident to a first side of the substrate into electric charge, and a cathode region disposed at a second side of the substrate. The second side is opposite the first side. The APD sensor includes an anode region disposed at the second side of the substrate, a first region of a first conductivity type disposed in the substrate, and a second region of a second conductivity type disposed in the substrate. The second conductivity type is different than the first conductivity type. In a cross-sectional view, the first region and the second region are between the photoelectric conversion region and the second side of the substrate. In the cross-sectional view, an interface between the first region and the second region has an uneven pattern.