Patent classifications
Y02E10/548
Germanium-silicon light sensing apparatus II
A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.
THIN-FILM PHOTOVOLTAIC CELL SERIES STRUCTURE AND PREPARATION PROCESS OF THIN-FILM PHOTOVOLTAIC CELL SERIES STRUCTURE
A thin-film photovoltaic cell series structure is disposed on a display surface side of a display module and includes a transparent substrate, as well as a first single-junction cell and a second single-junction cell which are disposed on the transparent substrate and connected in series. The first single-junction cell includes a first front electrode, a first photovoltaic layer, and a first back electrode which are sequentially laminated and disposed on the transparent substrate, the second single-junction cell includes a second front electrode, a second photovoltaic layer, and a second back electrode which are sequentially laminated and disposed on the transparent substrate, and the first front electrode and the second back electrode are electrically connected through a metal auxiliary electrode to realize series connection of the first single-junction cell and the second single-junction cell.
FLEXIBLE SOLAR CELL AND MANUFACTURING METHOD THEREOF
The present disclosure provides a flexible solar cell and a manufacturing method thereof. The manufacturing method includes disposing a flexible substrate on a back electrode to transfer to the solar cell unit and the flexible substrate onto a temporary substrate, and then separating the temporary substrate from the flexible substrate after the flexible solar cell is manufactured. Thus, it reduces tedious bonding and de-bonding operations in manufacturing process of the flexible solar cell, can improve production efficiency, and avoids damage of cells by a high-temperature condition required for bonding. Also, the process is quick and not easy to damage the solar cell. The front electrode, back electrode and flexible substrate in the flexible solar cell all can be prepared by plating, with a relatively low cost and low requirement for equipment, which is conductive to mass production in industry.
Sensing System for Detection of Light Incident to a Light Emitting Layer of an Electronic Device Display
Systems and methods for detection of incident light are described. An optical imaging sensor is positioned at least partially within an active display area of a display and is configured to detect and characterize one or more properties of light incident to the active display area of the display.
LASER LIGHT COLLECTING ASSEMBLY
A laser light collecting assembly for a wireless power receiver. The assembly includes a compound parabolic concentrator (CPC) mirror and an optical to electrical converter. The CPC minor has curved internal walls that define an inlet aperture and connect the inlet aperture to an outlet aperture. The inlet aperture may be larger than the outlet aperture. The internal walls may focus a majority of the laser light entering the inlet aperture to the outlet aperture. The optical to electrical converter may be positioned adjacent to the outlet aperture and configured to receive the laser light exiting the outlet aperture so as to convert optical power in the laser light to electrical power.
PHOTODIODE, METHOD FOR PREPARING THE SAME, AND ELECTRONIC DEVICE
The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.
CRYSTALLINE SILICON SOLAR CELL AND PREPARATION METHOD THEREFOR, AND PHOTOVOLTAIC MODULE
The disclosure relates to a crystalline silicon solar cell and a preparation method, and a photovoltaic module, belonging to the technical field of solar cells. The crystalline silicon solar cell includes a gallium oxide layer in direct contact with a P-type silicon layer in the crystalline silicon solar cell. In the disclosure, the gallium oxide layer in direct contact with the P-type silicon layer is arranged on the P-type silicon layer of the crystalline silicon solar cell, negative charges of the gallium oxide layer are used to carry out chemical passivation and field passivation on a surface of the P-type silicon layer, and the number of dangling bonds and minority carriers of silicon atoms on the surface of the P-type silicon layer is reduced, so that a minority carrier recombination rate at the surface of the P-type silicon layer is reduced, the voltage and current of the solar cell are improved, and photovoltaic conversion efficiency of the solar cell is improved, thus improving output power of the photovoltaic module, reducing cost per kilowatt hour of electricity and improving cost performance of photovoltaic power generation. In addition, the gallium oxide layer has a relatively wide band gap and an appropriate optical refractive index, and also facilitates improvement of the performance of the crystalline silicon solar cell.
SEMI TRANSPARENT PHOTOVOLTAIC DEVICE WITH OPTIMIZED COLLECTOR GRID
A semitransparent photovoltaic device comprising: a plurality of active photovoltaic areas including a transparent substrate, a front electrode, an absorber including one or more thin photoactive layers, and a rear electrode; a transparency area separating at least two of the active photovoltaic areas; and a collection grid. The collection grid includes a metallic contact layer and a plurality of VIAs between the front electrode and the metallic contact layer, wherein the VIAs are randomly distributed within the active photovoltaic area.
Transceiver assembly for free space power transfer and data communication system
A transceiver assembly for a wireless power transfer system includes a transceiver system comprising a photodiode assembly, a voltage converter and a light emitting diode and a photodiode. The photodiode assembly may be configured to receive a high-power laser beam from a transmitter and to convert the high-power laser beam to electrical energy. The voltage converter may be configured to adjust an input impedance based on a voltage measure of the photodiode assembly so as to maximize power transfer from the photodiode assembly to an energy storage device electrically coupled to the voltage converter. The light emitting diode and the photodiode may be configured to enable free space optical communication with the transmitter. The light emitting diode may emit signals indicating a presence and a location of the transceiver to the transmitter at least when the energy storage device requires a charge.
Solar cell
A solar cell includes an n-type silicon substrate having a first main surface and a second main surface, an n-type first semiconductor layer disposed above the first main surface, a first intrinsic semiconductor layer disposed between the first main surface and the first semiconductor layer, a p-type second semiconductor layer disposed on the second main surface, and a second intrinsic semiconductor layer disposed between the second main surface and the second semiconductor layer. An oxygen concentration at an interface between the silicon substrate and the second intrinsic semiconductor layer is lower than an oxygen concentration at an interface between the silicon substrate and the second intrinsic semiconductor layer. An oxygen concentration at an interface between the second intrinsic semiconductor layer and the second semiconductor layer is higher than an oxygen concentration at an interface between the first intrinsic semiconductor layer and the first semiconductor layer.