A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.

According to one embodiment, a photochemical reaction system comprises a CO.sub.2 production unit, a CO.sub.2 absorption unit, and a CO.sub.2 reduction unit. The CO.sub.2 reduction unit comprises a laminated body and an ion transfer pathway. The laminated body comprises an oxidation catalyst layer producing O.sub.2 and H.sup.+ by oxidizing H.sub.2O, a reduction catalyst layer producing carbon compounds by reducing CO.sub.2 absorbed by the CO.sub.2 absorption unit, and a semiconductor layer formed between the oxidation catalyst layer and the reduction catalyst layer and develops charge separation with light energy. The ion transfer pathways make ions move between the oxidation catalyst layer side and the reduction catalyst layer side.

A photoelectric conversion element includes an intrinsic layer that is disposed on a semiconductor of a first conductivity type and contains hydrogenated amorphous silicon; and a first-conductivity-type layer containing hydrogenated amorphous silicon of the first conductivity type, a second-conductivity-type layer containing hydrogenated amorphous silicon of a second conductivity type, and an insulating layer, each of which covers a part of the intrinsic layer. A first electrode is disposed on the first-conductivity-type layer with the second-conductivity-type layer therebetween. At least a part of the first electrode is located above a region where the first-conductivity-type layer contacts the intrinsic layer, and at least a part of the second electrode is located above a region where the second-conductivity-type layer contacts the intrinsic layer.

A PV panel is manufactured using a monolayer of small silicon sphere diodes (10-300 microns in diameter) connected in parallel. The spheres are embedded in an uncured aluminum-containing layer on an aluminum foil substrate in a roll-to-roll process, and the aluminum-containing layer is heated to anneal the aluminum-containing layer as well as p-dope the bottom surface of the spheres. The diffusion of the p-type dopants also creates a back surface field in the spheres to improve efficiency. A dielectric layer is formed, and a phosphorus-containing layer is deposited over the spheres to dope the top surface n-type, forming a pn junction. The phosphorus layer is then removed. A conductor is deposited to contact the top surface. Conformal, index-graded lenses are then formed over each of the spheres to form a thin and flexible PV panel.

A solar cell is provided with: an n-type single crystal silicon substrate; an n-type amorphous silicon layer disposed on a first main surface of the n-type single crystal silicon substrate; a light receiving surface electrode disposed on the n-type amorphous silicon layer; a p-type amorphous silicon layer disposed on a second main surface of the n-type single crystal silicon substrate; and a rear surface electrode disposed on the p-type amorphous silicon layer. The n-type single crystal silicon substrate has a resistivity within a range of 3.5-13 Ωcm. An i-type amorphous silicon layer may be provided between the n-type single crystal silicon substrate and the n-type amorphous silicon layer, and another i-type amorphous silicon layer may be provided between the n-type single crystal silicon substrate and the p-type amorphous silicon layer.

Methods and apparatuses for creating solar cell assemblies with bonded interlayers are disclosed. In summary, the present invention describes an apparatus and method for making a solar cell assembly with transparent conductive bonding interlayers. An apparatus in accordance with the present invention comprises a substrate, a first solar cell, coupled to a first side of the substrate, wherein the first solar cell comprises a first Transparent Conductive Coating (TCC) layer coupled to a first polarity electrode of the first solar cell, and a second solar cell, the second solar cell being bonded to the first solar cell by bonding the first TCC layer to the second solar cell.

A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.

A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.

Optoelectronic devices having an improved architecture are disclosed, such as p-i-n hybrid solar cells. These solar cells are characterized by including an insulating mesoporous scaffold in between the hole transportation layer and the photoactive layer, in such a way that the photoactive layer infiltrates the insulating mesoporous scaffold and contacts the hole transportation layer. The infiltration of the photoactive layer in the mesoporous scaffold improves the performance of the hole transportation layer and increases the photovoltaic performance of the solar cell. Solar cells, according to the present invention are manufactured in their entirety below 150° C. and present advantages in terms of cost and ease of manufacture, performance, and energy efficiency, stability over time and reproducibility.

A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.