Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.

A method of processing a substrate, with a first major surface of the substrate removably bonded to a first major surface of a first carrier and a second major surface of the substrate removably bonded to a first major surface of a second carrier, includes initiating debonding at a first location of an outer peripheral bonded interface between the substrate and the first carrier to separate a portion of the first carrier from the substrate. The method further includes propagating a first debond front from the first debonded location along a first direction extending away from the first debonded location by sequentially applying a plurality of lifting forces to the first carrier at a corresponding plurality of sequential lifting locations of the first carrier.

A film separation apparatus and a film separation method are disclosed. The film separation apparatus includes a mechanical arm, a needle and a stopping member; the needle has one end connected to the mechanical arm and the other end including a needle tip; the stopping member includes a connecting rod and a stopper, the connecting rod has one end connected to the mechanical arm and the other end connected to the stopper, the needle tip is configured to be inserted into a film to be separated, the stopper and the needle tip are configured to move with respect to each other in an extension direction of the needle so as to separate the film to be separated from the needle tip.

A bonded structure contains a substrate containing at least one feature, the substrate having a top surface; a first release layer overlying the top surface of the substrate, the first release layer being absorptive of light having a first wavelength for being decomposed by the light; an adhesive layer overlying the first release layer, and a second release layer overlying the adhesive layer. The second release layer is absorptive of light having a second wavelength for being decomposed by the light having the second wavelength. The bonded structure further contains a handle substrate that overlies the second release layer, where the handle substrate is substantially transparent to the light having the first wavelength and the second wavelength. Also disclosed is a debonding method to process the bonded structure to remove and reclaim the adhesive layer for re-use. In another embodiment a multi-step method optically cuts and debonds a bonded structure.

The present application provides a separation apparatus for a flexible display panel, includes a support post, a power unit and a vacuum suction block; wherein the supporting post is used to support the separation apparatus on the relatively upper side of the rigid substrate to be separated; the vacuum suction block is in communication with the support post, and is used to suck and connect the rigid substrate to be separated; and one end of the power unit is connected to the support post, the other end is rotatably connected with the vacuum suction block, and is used for controlling the vacuum suction block and the rigid substrate to be separated together to be separated from the flexible display panel. The present application also provides a method for separating a flexible display panel.

Systems and methods for debonding a carrier from a semiconductor device are disclosed herein. In one embodiment, a system for debonding a carrier from a semiconductor device includes a support member positioned to carry the semiconductor device and a fluid delivery device having an exit positioned to direct a fluid toward an adhesive layer between the carrier and the semiconductor device. The fluid directed from the fluid delivery device initiates debonding of the carrier from the semiconductor device by weakening or loosening at least a portion of the adhesive. The system further includes a liftoff device configured to releasably engage the carrier and apply a debonding force to the carrier to complete debonding of the carrier from the semiconductor device.

Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.

Structures and methods are provided for temporarily bonding handler wafers to device wafers using bonding structures that include one or more releasable layers which are laser-ablatable using mid-wavelength infrared radiation.

A detaping machine is adapted for removing a tape from a frame, the tape includes a wafer mounting area and a periphery area surrounding the wafer mounting area. The detaping machine includes a carrier and a detaping module. The carrier is for supporting the tape and the frame. The detaping module includes an elastic pressing device and a detaping head, wherein the periphery area of the tape is adapted to be pressed by the elastic pressing device, and the wafer mounting area of the tape is adapted to be pressed by the detaping head. A detaping method is further provided.

The present invention relates to a peeling bar, apparatus, and method for peeling a polarizing film from a panel. This invention can minimize friction between the peeling bar and the polarizing film since the peeled polarizing film is in contact with a main roller of the peeling bar. The radius of the main roller of the peeling bar and the inclined surface of the fixing unit are designed to minimize the Z-axis component of a shearing force applied to the polarizing film. Also, in order to equalize tension applied to the polarizing film in a peeling process, this invention makes both ends of the polarizing film closely adhere to the peeling bar. According to this invention, fracture of the polarizing film is prevented, and thereby the polarizing film can be stably peeled from the panel without fracture.