Systems and methods for debonding a carrier from a semiconductor device are disclosed herein. In one embodiment, a system for debonding a carrier from a semiconductor device includes a support member positioned to carry the semiconductor device and a fluid delivery device having an exit positioned to direct a fluid toward an adhesive layer between the carrier and the semiconductor device. The fluid directed from the fluid delivery device initiates debonding of the carrier from the semiconductor device by weakening or loosening at least a portion of the adhesive. The system further includes a liftoff device configured to releasably engage the carrier and apply a debonding force to the carrier to complete debonding of the carrier from the semiconductor device.

A method for separating different types of material layers of a composite component that has at least one material layer that is transparent for visible light and at least one further material layer, is provided, wherein the light from an external source falls through the at least one transparent material layer into the at least one further material layer and there is at least partially absorbed. With the help of at least one gas discharge lamp, the light-absorbing material layer is heated in less than one second to separate material layers of the composite component. A device that can be used for this method comprises at least one separation chamber and therein at least one gas discharge lamp suitable for irradiation.

A cover structure for a light source includes a frame having an inner space, a driver, and an oxygen discharger. The frame is combined with the light source such that an object disposed in the inner space is covered by the frame, and the inner space is sealed by the combined frame and light source to provide a closed space between the frame and the light source enclosing the object. The driver combines the frame and the light source by moving the frame toward the light source such that the frame contacts the light source. The oxygen discharger creates a low-oxygen state in the closed space by discharging oxygen from the closed space.

Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.

A method of processing a substrate, with a first major surface of the substrate removably bonded to a first major surface of a first carrier and a second major surface of the substrate removably bonded to a first major surface of a second carrier, includes initiating debonding at a first location of an outer peripheral bonded interface between the substrate and the first carrier to separate a portion of the first carrier from the substrate. The method further includes propagating a first debond front from the first debonded location along a first direction extending away from the first debonded location by sequentially applying a plurality of lifting forces to the first carrier at a corresponding plurality of sequential lifting locations of the first carrier.

A bonded structure contains a substrate containing at least one feature, the substrate having a top surface; a first release layer overlying the top surface of the substrate, the first release layer being absorptive of light having a first wavelength for being decomposed by the light; an adhesive layer overlying the first release layer, and a second release layer overlying the adhesive layer. The second release layer is absorptive of light having a second wavelength for being decomposed by the light having the second wavelength. The bonded structure further contains a handle substrate that overlies the second release layer, where the handle substrate is substantially transparent to the light having the first wavelength and the second wavelength. Also disclosed is a debonding method to process the bonded structure to remove and reclaim the adhesive layer for re-use. In another embodiment a multi-step method optically cuts and debonds a bonded structure.

The present application provides a separation apparatus for a flexible display panel, includes a support post, a power unit and a vacuum suction block; wherein the supporting post is used to support the separation apparatus on the relatively upper side of the rigid substrate to be separated; the vacuum suction block is in communication with the support post, and is used to suck and connect the rigid substrate to be separated; and one end of the power unit is connected to the support post, the other end is rotatably connected with the vacuum suction block, and is used for controlling the vacuum suction block and the rigid substrate to be separated together to be separated from the flexible display panel. The present application also provides a method for separating a flexible display panel.

Systems and methods for debonding a carrier from a semiconductor device are disclosed herein. In one embodiment, a system for debonding a carrier from a semiconductor device includes a support member positioned to carry the semiconductor device and a fluid delivery device having an exit positioned to direct a fluid toward an adhesive layer between the carrier and the semiconductor device. The fluid directed from the fluid delivery device initiates debonding of the carrier from the semiconductor device by weakening or loosening at least a portion of the adhesive. The system further includes a liftoff device configured to releasably engage the carrier and apply a debonding force to the carrier to complete debonding of the carrier from the semiconductor device.

Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.

Structures and methods are provided for temporarily bonding handler wafers to device wafers using bonding structures that include one or more releasable layers which are laser-ablatable using mid-wavelength infrared radiation.