A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle () between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0<<180.

A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle () between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0<<180.

A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle () between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0<<180. Also, a metal nanowire according to another embodiment of the invention includes at least two wire portions. The metal nanowire includes an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion. A diameter of the n-th wire portion is different from a diameter of the (n+1)-th wire portion. In addition, a core-shell nanowire according to yet another embodiment includes a nanowire core; and a metal-compound shell formed on the nanowire core. A method of manufacturing a metal nanowire according to an embodiment includes preparing a reaction mixture and synthesizing a nanowire. In the preparing the reaction mixture, a metal salt, a reducing solvent for reducing the metal salt to a melt, a capping agent for growing the metal into a shape of a wire, and a catalyst are mixed. In the synthesizing the nanowire, the mixture is added to a reaction container and is reacted in the reaction container at 1 to 5 atm. Then, the nanowire including at least two wire portions and having a bent portion is manufactured. Also, a method of manufacturing a metal nanowire according to another embodiment includes preparing a reaction mixture and synthesizing a nanowire. In the preparing the reaction mixture, a metal salt, a reducing solvent for reducing the metal salt to a melt, a capping agent for growing the metal into a shape of a wire, and a catalyst are mixed. In the synthesizing the nanowire, the mixture is added to a reaction container and is reacted in the reaction container at 1 to 5 atm. Then, the nanowire having different diameters is manufactured. In addition, a method of manufacturing a metal nanowire according to yet another embodiment preparing a nanowire core on a substrate; contacting the nanowire core with a precursor solution for forming a metal-compound shell; and forming a metal-compound shell on the nanowire core by supplying growth energy. A transparent electrode according to an embodiment includes a conductor layer including a metal nanowire; and a transparent electrode layer formed on the conductor layer. The metal nanowire includes at least one bent portion. An angle () between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0<<180. Also, a transparent electrode according to another embodiment includes a conductor layer including a metal nanowire; and a transparent e

The method for producing noble metal nanocomposites involves reducing noble metal ions (Ag, Au and Pt) on graphene oxide (GO) or carbon nanotubes (CNT) by using Artocarpus integer leaves extract as a reducing agent. As synthesized MNPs/GO and MNPs/CNT composites have been characterized using X-ray diffraction (XRD), transmission electron microscope (TEM) imaging, and energy dispersive X-ray spectroscopy (EDX). The TEM images of prepared materials showed that the nanocomposites were 1-30 nm in size with spherical nanoparticles embedded on the surface of GO and CNT. This synthetic route is easy and rapid for preparing a variety of nanocomposites. The method avoids use of toxic chemicals, and the prepared nanocomposites can be used for biosensor, fuel cell, and biomedical applications.

The method for producing noble metal nanocomposites involves reducing noble metal ions (Ag, Au and Pt) on graphene oxide (GO) or carbon nanotubes (CNT) by using Artocarpus integer leaves extract as a reducing agent. As synthesized MNPs/GO and MNPs/CNT composites have been characterized using X-ray diffraction (XRD), transmission electron microscope (TEM) imaging, and energy dispersive X-ray spectroscopy (EDX). The TEM images of prepared materials showed that the nanocomposites were 1-30 nm in size with spherical nanoparticles embedded on the surface of GO and CNT. This synthetic route is easy and rapid for preparing a variety of nanocomposites. The method avoids use of toxic chemicals, and the prepared nanocomposites can be used for biosensor, fuel cell, and biomedical applications.

A carbon nanotube composite material (1) includes a metal base material (10) and carbon nanotube electrically-conductive path portions (20). The metal base material (10) is made from a polycrystalline substance in which a plurality of rod-shaped metal crystal grains (11) are oriented in a direction. The carbon nanotube electrically-conductive path portions (20) are made from doped carbon nanotubes having a dopant, existing in parts of grain boundaries (15) between the rod-shaped metal crystal grains (11) in a cross section of the metal base material (10), and forming an electrically-conductive path which is electrically conductive in a longitudinal direction of the metal base material (10), by existing along the longitudinal direction (L).

A first plasmonic-nanostructure sensor pixel includes a semiconductor substrate and a plurality of metal pillars. The semiconductor substrate has a top surface and a photodiode region therebeneath. The plurality of metal pillars is at least partially embedded in the substrate and extends from the top surface in a direction substantially perpendicular to the top surface. A second plasmonic-nanostructure sensor pixel includes (a) a semiconductor substrate having a top surface, (b) an oxide layer on the top surface, (c) a thin-film coating between the top surface and the oxide layer, and (d) a plurality of metal nanoparticles (i) at least partially between the top surface and the oxide layer and (ii) at least partially embedded in at least one of the thin-film coating and the oxide layer. A third plasmonic-nanostructure sensor pixel includes features of both the first and second plasmonic-nanostructure sensor pixels.

The present invention generally concerns a method for isolating nanoparticles via the decomposition of a ternary metal hydride. More specifically, the present invention harnesses increased energy densities from two distinct nanoparticles isolated by a precise decomposition of LiAlH.sub.4. The singular material is air stable and is a nanocomposite of Li.sub.3AlH.sub.6 nanoparticles, elemental Al nanoparticles, an amount of Ti metal, and a nanoscale organic layer, which we call nMx. The nanocomposite protects and preserves the high energy densities of the core metals isolated from the controlled reaction and makes the nanoparticles safe to handle in air. The final composite is devoid of byproducts or phase transitions that will decrease the energy output of the nanocomposite. The method of the present invention creates a narrow distribution of nanoparticles that have unique burning characteristics useful for many applications.

The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Disclosed herein are composite fluorescent gold nanoclusters with high quantum yield, as well as methods for manufacturing the same. According to some embodiments, the composite fluorescent gold nanocluster includes a gold nanocluster and a capping layer that encapsulates at least a portion of the outer surface of the gold nanocluster. The capping layer includes a matrix made of a benzene-based compound, and multiple phosphine-based compounds distributed across the matrix.