The membrane of a conventional solid-state nanopore device, which is believed to be promising for understanding the structural characteristics of DNA and determining a nucleotide sequence, has been thick, and the accuracy in determining a nucleotide sequence in the DNA chain has been insufficient. A method characterized by forming a membrane by forming a first film on a first substrate having a surface of Si, then forming a hole in the first film in such a manner that the surface of the first substrate is exposed, then forming a second film on the first film and on the surface of the first substrate and then etching the first substrate with a solution which does not remove the second film.

A process for producing a light emitting diode device, the process including: forming a plurality of quantum dots on a surface of a layer including a first area and a second area, the forming including: exposing the first area of the surface to light having a first wavelength while exposing the first area to a quantum dot forming environment that causes the quantum dots in the first area to form at a first growth rate while the quantum dots have a dimension less than a first threshold dimension; exposing the second area of the surface to light having a second wavelength while exposing the second area to the quantum dot forming environment that causes the quantum dots in the second area to form at a third growth rate while the quantum dots have a dimension less than a second threshold dimension; and processing the layer to form the LED device.

A process for producing a light emitting diode device, the process including: forming a plurality of quantum dots on a surface of a layer including a first area and a second area; exposing the first area of the surface to light having a first wavelength while exposing the first area to a first etchant that causes the quantum dots in the first area to be etched at a first etch rate while the quantum dots have a dimension at or greater than a first threshold dimension; exposing the second area of the surface to light having a second wavelength while exposing the second area to a second etchant that causes the quantum dots in the second area to be etched at a third etch rate while the quantum dots have a dimension at or greater than a second threshold dimension; and processing the etched layer to form the LED device.

A method of forming a micro-structure involves forming a multi-layered structure including i) an oxidizable material layer on a substrate and ii) another oxidizable material layer on the oxidizable material layer. The oxidizable material layer is formed of an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. The method further involves forming a template, including a plurality of pores, from the other oxidizable material layer, and growing a nano-pillar inside each pore. The nano-pillar has a predefined length that terminates at an end. A portion of the template is selectively removed to form a substantially even plane that is oriented in a position opposed to the substrate. A material is deposited on at least a portion of the plane to form a film layer thereon, and the remaining portion of the template is selectively removed to expose the nano-pillars.

The disclosure relates to methods of printing indicia on a substrate using a tip array comprised of elastomeric, compressible polymers. The tip array can be prepared using conventional photolithographic methods and can be tailored to have any desired number and/or arrangement of tips. Numerous copies (e.g., greater than 15,000, or greater than 11 million) of a pattern can be made in a parallel fashion in as little as 40 minutes.

A method of making an optical device including forming a plurality of holes with varying radii milled vertically into a film, wherein said holes form a pattern. The radius of each hole determines an effective refractive index for said hole. The effective refractive index modifies a phase and an intensity of an incoming electromagnetic radiation as the radiation propagates through said hole. The device is configured to be operating equally for each linearly polarized radiation simultaneously, wherein the each linearly polarized radiation is normally incident on the device.

A process for producing a light emitting diode device, the process including: forming a plurality of quantum dots on a surface of a layer including a first area and a second area, the forming including: exposing the first area of the surface to light having a first wavelength while exposing the first area to a quantum dot forming environment that causes the quantum dots in the first area to form at a first growth rate while the quantum dots have a dimension less than a first threshold dimension; exposing the second area of the surface to light having a second wavelength while exposing the second area to the quantum dot forming environment that causes the quantum dots in the second area to form at a third growth rate while the quantum dots have a dimension less than a second threshold dimension; and processing the layer to form the LED device.

Vacuum deposited thin films of material are used to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nano structured features in a block copolymer film that can serve as lithographic patterns.

The present invention relates to a method for manufacturing a GaAs semiconductor nanowire in a bottom-up type and, more particularly, to a method for manufacturing a vertically-aligned gallium arsenide semiconductor nanowire array in a large area by applying a voltage and a current from the outside using a metal thin film, which has been made through an economical method of fabricating a mesh-type metal thin film in a large area, as an anode such that holes (h.sup.+) are injected into a gallium arsenide substrate, thereby inducing a wet etching process continuously. The obtained vertically-aligned gallium arsenide semiconductor nanowire of a large area can be applied to fabrication of nanoelements, such as a solar cell, a transistor, and a light-emitting diode.

Nanopillar-based closed ring resonator (CRR) MMs, utilizing displacement current in the nano gap medium between nanopillars that significantly increases energy storage in the MMs, leading to an enhanced Q-factor of at least 11000. A metallic nanopillar array is designed in the form of a closed ring (e.g., square-shape) CRR