Multi-phase polymer films of quantum dots (QDs) and their use in light emitting devices (LEDs) are disclosed. The QDs are absorbed in a host matrix, which dispersed within an outer polymer phase. The host matrix is hydrophobic and is compatible with the surface of the QDs. The host matrix may also include a scaffolding material that prevents the QDs from agglomerating. The outer polymer is typically more hydrophilic and prevents oxygen from contacting the QDs.

An electronic device may include a first substrate, an electrically conductive feed line on the first substrate, an insulating layer on the first substrate and the electrically conductive feed line, a second substrate on the insulating layer, and an antenna on the second substrate and having nanofilm layers stacked on the second substrate. The antenna is coupled to the feed line through an aperture.

A QD glass cell includes a glass cell and QD fluorescent powder material. The glass cell includes a receiving chamber, and the QD fluorescent powder being encapsulated within the receiving chamber. A manufacturing method of the QD glass cell includes: S101: manufacturing a glass cell comprising a receiving chamber, and the glass cell comprising an injection port transmitting fluid into the receiving chamber; S102: manufacturing fluid QD fluorescent powder material; S103: filling the fluid QD fluorescent powder material into the receiving chamber via the injection port; S104: applying a curing process to the fluid QD fluorescent powder material within the receiving chamber; and S105: sealing the injection port by hot melting to obtain the QD glass cell. In addition, the above QD glass cell may be applied to LED light source.

Multi-phase polymer films of quantum dots (QDs) are disclosed. The QDs are absorbed in a host matrix, which dispersed within an outer polymer phase. The host matrix is hydrophobic and is compatible with the surface of the QDs. The host matrix may also include a scaffolding material that prevents the QDs from agglomerating. The outer polymer is typically more hydrophilic and prevents oxygen from contacting the QDs.

Provided is a nanowire manufacturing substrate, comprising a grid base layer on a substrate and a grid pattern formed by patterning the grid base layer, the grid pattern being disposed to produce a nanowire on a surface thereof. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production.

The present invention relates to colloidal quantum dots, to a process for producing such colloidal quantum dots, to the use thereof and to optoelectronic components comprising colloidal quantum dots.

A material comprising positively and negatively charged nanoparticles, wherein one of said nanoparticles contained a magnetically responsive element, are combined with a support molecule, which is a long natural or synthetic molecule or polymer to make a magnetic nanoparticle assembly. When the magnetic nanoparticle assembly is combined with cells, it will magnetize those cells. The magnetized cells can then be washed to remove the magnetic nanoparticle assembly and the magnetized cells manipulated in a magnetic field.

An electronic device may include a first substrate, an electrically conductive feed line on the first substrate, an insulating layer on the first substrate and the electrically conductive feed line, a second substrate on the insulating layer, and an antenna on the second substrate and having nanofilm layers stacked on the second substrate. The antenna is coupled to the feed line through an aperture.

An LED is fabricated with a composite layer including quantum dots (QDs), wherein the QDs are provided in a silicone paste. A plurality of QD silicone paste reservoirs each contain a provided silicone paste with QDs of different wavelengths. Further, a silicone paste reservoir containing a clear silicone paste. A paste mixing chamber, in to which the QD paste reservoirs and the silicone paste reservoir supply their respective pastes, mixes together the pastes and form a mixed QD silicone paste. A silicone mixing and metering component receives the mixed QD silicone paste from the paste mixing chamber, and further receives A silicone and B silicone from a respective A silicone reservoir and a B silicone reservoir, measures, and mixes the mixed QD silicone paste with the A and B silicones to form a silicone polymer composite. A dispensing component receives to the silicone polymer composite from the mixing and metering component and dispenses the composite to a molding tool.

Nanowire-based gate all-around transistor devices having one or more active nanowires and one or more inactive nanowires are described herein. Methods to fabricate such devices are also described. One or more embodiments of the present invention are directed at approaches for varying the gate width of a transistor structure comprising a nanowire stack having a distinct number of nanowires. The approaches include rendering a certain number of nanowires inactive (i.e. so that current does not flow through the nanowire), by severing the channel region, burying the source and drain regions, or both. Overall, the gate width of nanowire-based structures having a plurality of nanowires may be varied by rendering a certain number of nanowires inactive, while maintaining other nanowires as active.