The invention provides a lighting device comprising (i) a light source configured to generate light source light, and (ii) a light converter configured to convert at least part of the light source light into visible converter light, wherein the light converter comprises a polymeric host material with light converter nanoparticles embedded in the polymeric host material, wherein the polymeric host material is based on radical polymerizable monomers, and wherein the polymeric host material contains equal to or less then 5 ppm radical initiator based material relative to the total weight of the polymeric host material.

A QD glass cell includes a glass cell and QD fluorescent powder material. The glass cell includes a receiving chamber, and the QD fluorescent powder being encapsulated within the receiving chamber. A manufacturing method of the QD glass cell includes: S101: manufacturing a glass cell comprising a receiving chamber, and the glass cell comprising an injection port transmitting fluid into the receiving chamber; S102: manufacturing fluid QD fluorescent powder material; S103: filling the fluid QD fluorescent powder material into the receiving chamber via the injection port; S104: applying a curing process to the fluid QD fluorescent powder material within the receiving chamber; and S105: sealing the injection port by hot melting to obtain the QD glass cell. In addition, the above QD glass cell may be applied to LED light source.

Techniques for forming nanostructured materials are provided. In one aspect of the invention, a method for forming nanotubes on a buried insulator includes the steps of: forming one or more fins in a SOI layer of an SOI wafer, wherein the SOI wafer has a substrate separated from the SOI layer by the buried insulator; forming a SiGe layer on the fins; annealing the SiGe layer under conditions sufficient to drive-in Ge from the SiGe layer into the fins and form a SiGe shell completely surrounding each of the fins; and removing the fins selective to the SiGe shell, wherein the SiGe shell which remains forms the nanotubes on the buried insulator. A nanotube structure and method of forming a nanotube device are also provided.

Provided are spatially-annealed nanoparticle films. The films have one or more discrete regions that exhibit size-dependent properties. Also provided are methods of making the spatially-annealed nanoparticle films. The films can be used in, for example, light emitting applications (e.g., in light emitting diodes).

In some embodiments, a method for manufacturing forms a semiconductor device, such as a transistor. A dielectric stack is formed on a semiconductor substrate. The stack comprises a plurality of dielectric layers separated by one of a plurality of spacer layers. Each of the plurality of spacer layers is formed of a different material than immediately neighboring layers of the plurality of dielectric layers. A vertically-extending hole is formed through the plurality of dielectric layers and the plurality of spacer layers. The hole is filled by performing an epitaxial deposition, with the material filling the hole forming a wire. The wire is doped and three of the dielectric layers are sequentially removed and replaced with conductive material, thereby forming upper and lower contacts to the wire and a gate between the upper and lower contacts. The wire may function as a channel region for a transistor.

A spatial light modulator based on a metamaterial structure and a preparation method thereof. The spatial light modulator includes an array of optical function elements and a control circuit. The optical function element includes a metamaterial structure formed by a metal nanostructure layer and a metal reflector layer, with a medium layer and nonmetal conducting material layer being provided between the metal nanostructure layer and the metal reflector layer. The spatial light modulator is simple in structure, high in integration, easy in manufacture and low in cost. Furthermore, the spatial light modulator is capable of high-speed modulation, the depth of modulation is controlled easily, and a low drive voltage may be obtained.