Embodiments of the invention determine intrinsic parameters of stacked nanowires/nanosheets GAA MOSFETs comprising N.sub.w nanowires and/or nanosheets, each nanowire/nanosheet being surrounded in an oxide layer, the oxide layers being embedded in a common gate, wherein the method comprises the following steps: measuring the following parameters of the MOSFET: number of stacked nanowires/nanosheets N.sub.w, width W.sub.w,i, of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.w, thickness of the nanowire/nanosheet H.sub.w,i, number i, i being an integer from 1 to N.sub.w, corner radius R.sub.w,i of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.w, R.sub.w,i; calculating, using a processor and the measured parameters, a surface potential x normalized by a thermal voltage .sub.T given by .sub.T=k.sub.BT/q; measuring the total gate capacitance for a plurality of gate voltages; determining, using the measured total gate capacitance and the calculated normalized surface potential, the intrinsic parameter of the stacked nanowires/nanosheets MOSFET.

Photoluminescent carbon nanoparticles and a method of preparing the same are described herein. A method of preparing photoluminescent carbon nanoparticles includes obtaining carbon nanodots, and treating the carbon nanodots with plasma.

Disclosed is a method of calibrating apparatus for optically characterizing samples of particles of small size. Also disclosed is a method of estimating the concentration of particles in a population of small size particles.

An optical material comprising quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles are in a charge neutral state is disclosed. Also disclosed is an optical component including an optical material comprising quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles are in a charge neutral state. Further disclosed is an optical material obtainable by at least partially encapsulating an optical material comprising quantum confined semiconductor nanoparticles and irradiating the at least partially encapsulated optical material with a light flux for a period of time sufficient to neutralize the charge on at least a portion of the nanoparticles. Further enclosed is an optical component obtainable by at least partially encapsulating an optical component including an optical material comprising quantum confined semiconductor nanoparticles and irradiating the at least partially encapsulated optical material with a light flux for a period of time sufficient to neutralize the charge on at least a portion of the nanoparticles. Methods are also disclosed.

A system and method may utilize holography to facilitate fabrication techniques such as 3D printing and lithography. The system may include a light source, a hologram of an original object or lithographic pattern recorded in a holographic medium, and a target such as a reservoir of photosensitive material or a photosensitive material attached to a substrate. Illuminating the hologram with the appropriate light source may cause a holographic image of the original object or lithographic pattern to form on the photosensitive material within the reservoir or on the substrate. Formation of the holographic image may result in the formation of a new object from the photosensitive material, or may facilitate removal or retention of photosensitive material as part of a lithographic process.

An optical material comprising quantum confined semiconductor nanoparticles having an improved solid state photoluminescent efficiency is disclosed. Also disclosed is an optical component including an optical material comprising quantum confined semiconductor nanoparticles having an improved solid state photoluminescent efficiency. Further disclosed are methods for treating an optical material comprising quantum confined semiconductor nanoparticles. Further disclosed are methods for treating an optical component including an optical material comprising quantum confined semiconductor nanoparticles. One method comprises exposing the optical material to a light flux and heat for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value. Another method comprises exposing an optical component comprising quantum confined semiconductor nanoparticles to a light flux and heat for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value. Additional methods are disclosed, as are optical materials and optical components obtained by such methods. Devices including optical materials and/or optical components are also disclosed.