Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The ideal tunneling diode of the present disclosure may be utilized in diode-based optoelectronic devices.

Provided is a carbon nanotube (CNT) network which can improve an electrical joint so that a sufficient amount of current flows into a thin film and the amount of current is controlled. A network of CNT or a CNT hybrid material is constructed by distributing, as a node between CNT and CNT in a CNT thin film, a fine particle of an inorganic semiconductor and preferably fine particles of a metal halide, a metal oxide, or a metal sulfide.

This present invention relates to oxidized, discrete carbon nanotubes in dispersions, especially for use in printing inks. The dispersions can include materials such as elastomers, thermosets and thermoplastics or aqueous dispersions of open-ended carbon nanotubes with additives. A further feature of this invention relates to the development of a dispersion of oxidized, discrete carbon nanotubes that are electrically conductive.

Selective receiver coatings provide high performance for concentrated solar power applications. The coating provides high solar absorptivity (90% or greater) with low IR emissivity (0.1 or less) while maintaining stability at temperatures greater than 700° C. The coating comprises a composite of nanoparticles forming mesoporous with a conformal coating.

The invention in suitable embodiments is directed to dynamic bio-nanoparticle elements and bio-nanoparticle platforms employing such bio-nanoparticle elements. In one aspect, one or more elements of one or more types, formed from isolated, synthetic and or recombinant amino acid residues comprising in whole or in part one or more types of Clathrin and or Coatomer I/II proteins of one or more isoforms, execute one or more functions and or effect one or more ends, in vivo and or in vitro.

A conductive composite including: a polymer matrix including a microcellulose fiber; and at least two conductive nanomaterials dispersed in the polymer matrix, wherein the conductive nanomaterial includes a metal nanowire, wherein the at least two of the conductive nanomaterials provide an assembled layer surrounding a surface of the microcellulose fiber.

The present invention relates to the technical field of inorganic nanofilm materials, and provides a method for preparing a tungsten sulfide thin film. The method comprises the steps of: applying a one-atom-thick W layer on a silicon substrate; applying a one-atom-thick S layer on the W layer; and applying another one-atom-thick W layer on the S layer, to obtain a thin film that is a single-layer thin film having a W—S—W layered structure. The present invention further provides a tungsten sulfide thin film prepared through the method. By means of the method according to the present invention, large-area preparation of the W—S—W thin film is realized, and the quality of the prepared W—S—W thin film is considerably improved, which greatly improves the electrical performance of the W—S—W thin film.

A method for making thermoacoustic device includes following steps. A silicon substrate having a first surface and second surface opposite to the first surface is provided. The first surface is patterned by forming a plurality of grooves substantially oriented along a first direction, wherein the plurality of grooves is spaced from each other, and a bulge is formed between each two adjacent grooves. An insulating layer is coated on the patterned surface. A first electrode and a second electrode are formed on the insulating layer, wherein the first electrode and the second electrode are spaced from each other. A carbon nanotube structure is applied on the insulating layer, wherein the carbon nanotube structure is electrically connected to the first electrode and the second electrode, the carbon nanotube structure is suspended above the plurality of grooves.

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

Provided is a semiconductor transport member that includes a semiconductor mounting member capable of expressing a strong gripping force and unlikely to cause a contaminant to adhere and remain on a semiconductor side. Also provided is a semiconductor mounting member capable of expressing a strong gripping force and unlikely to cause a contaminant to adhere and remain on a semiconductor side. The semiconductor transport member of the present invention includes: a carrying base; and a semiconductor mounting member, in which: the semiconductor mounting member includes a fibrous columnar structure; the fibrous columnar structure includes a fibrous columnar structure including a plurality of fibrous columnar objects; the fibrous columnar objects are each aligned in a direction substantially perpendicular to the carrying base; and a surface of the fibrous columnar structure on an opposite side to the carrying base has a coefficient of static friction against a glass surface of 2.0 or more.