A multilayer component is disclosed. In an embodiment, a multilayer component includes a fully active stack comprising a plurality of dielectric layers, internal electrodes and two external electrodes arranged on opposite sides of the stack, wherein at least one portion of the internal electrode layers are coated.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of producing a multi-layer ceramic electronic component includes: preparing a multi-layer sheet including laminated ceramic sheets, and internal electrodes disposed between the ceramic sheets; cutting the multi-layer sheet to produce multi-layer chips each having side surfaces from which the internal electrodes are exposed; smoothing the side surfaces of the multi-layer chips; and providing side margins to the smoothed side surfaces of the multi-layer chips.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A capacitor includes a dielectric structure formed of a sintered dielectric, and a first electrode and a second electrode each formed of a conductor. The dielectric structure includes a wall. The first electrode and the second electrode are insulated from each other by the wall. The wall has a height which is a dimension in a first direction, and a thickness which is a dimension in a second direction orthogonal to the first direction, the height being greater than the thickness. The wall has a non-straight shape when seen in the first direction.

A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.

A method of producing a fully active multilayer element including producing a fully active stack, and optionally sintering of the fully active stack or a green precursor thereof; applying outer electrodes onto sides A and C of the fully active stack and contacting of the uncoated inner electrodes so that the two outer electrodes electrically connect to the uncoated inner electrode layers.

The present invention provides a device for manufacturing a multi-layer stacked structure and a method for manufacturing a thin film capacitor. The method includes providing a carrier substrate, forming a plurality of first material layers and a plurality of second layers that are alternately stacked on top of one another to form a multi-layer stacked structure, and then forming two terminal electrode structures for respectively enclosing two opposite side portions of the multi-layer stacked structure. One of the first material layer and the second material layer has a plurality of conductive particles randomly distributed therein. The conductive particles are heated to form a spherical structure or a sphere-like structure with low melting point and high surface energy at a temperature that is smaller than the degradation temperature of polymers. Therefore, the dielectric constant of the multi-layer stacked structure and the thin film capacitor can be increased.