An apparatus for executing a direct transfer of a semiconductor device die from a first substrate to a second substrate. The apparatus includes a first substrate conveyance mechanism movable in two axes. A micro-adjustment mechanism is coupled with the first substrate conveyance mechanism and is configured to hold the first substrate and to make positional adjustments on a scale smaller than positional adjustments caused by the first substrate conveyance mechanism. The micro-adjustment mechanism includes a micro-adjustment actuator having a distal end and a first substrate holder frame that is movable via contact with the distal end of the micro-adjustment actuator. A second frame is configured to secure the second substrate such that a transfer surface is disposed facing the semiconductor device die disposed on a surface of the first substrate. A transfer mechanism is configured to press the semiconductor device die into contact with the transfer surface of the substrate.

A rotor arrangement (1a, 1b) for an electric machine of a vehicle. The rotor arrangement (1a, 1b) comprises a rotor lamination stack (4) and the rotor arrangement further comprises a rotor support (2a, 2b). The rotor support (2a, 2b) carries the rotor lamination stack (4), which is arranged on the radially outer side (6a, 6b) of the rotor support (2a, 2b). A retaining element is arranged on the outer side (6a, 6b) of the rotor support at the end on the rotor lamination stack (4). The retaining element is a one-piece, closed retaining ring (5a, 5b) with an axial ring width (SR) and with at least a first ring diameter (R1). The first ring diameter (R1) is smaller than or equal to the rotor support diameter (TR), so that the rotor laminate stack (4) is secured axially in a rotationally fixed manner. The invention also relates to two production methods.

Disclosed are methods and systems of controlling the placement of micro-objects on the surface of a micro-assembler. Control patterns may be used to cause electrodes of the micro-assembler to generate dielectrophoretic (DEP) and electrophoretic (EP) forces which may be used to manipulate, move, position, or orient one or more micro-objects on the surface of the micro-assembler. The control patterns may be part of a library of control patterns.

Methods and apparatuses for forming a woven coil assembly (100), the coil assembly having adjacent superimposed linear portions (LI-L6, AL7-ALI2) extending parallel to each other in a first area (Al) of the coil assembly, and adjacent superimposed linear portions (L7-L12, AL13-AL18) extending parallel to each other in a second area (A2) of the coil assembly, wherein a plurality of head portions (T) connect the linear portions of the first area (AI) to the linear portions of the second area (A2).

A compensating plug connector comprising a plug, a receptacle mating zone, a cable mating zone and an intermediate zone. Each of the zones is such that Near End Cross Talk (NEXT) resulting from transmission of the high frequency signal across each zone is below a specified amount chosen such that NEXT introduced by a high frequency signal transmission between via all the zones is below a level as specified for the cabling category.

An apparatus for executing a direct transfer of a semiconductor device die from a first substrate to a second substrate. The apparatus includes a first substrate conveyance mechanism movable in two axes. A micro-adjustment mechanism is coupled with the first substrate conveyance mechanism and is configured to hold the first substrate and to make positional adjustments on a scale smaller than positional adjustments caused by the first substrate conveyance mechanism. The micro-adjustment mechanism includes a micro-adjustment actuator having a distal end and a first substrate holder frame that is movable via contact with the distal end of the micro-adjustment actuator. A second frame is configured to secure the second substrate such that a transfer surface is disposed facing the semiconductor device die disposed on a surface of the first substrate. A transfer mechanism is configured to press the semiconductor device die into contact with the transfer surface of the substrate.

A device for flaring an end section of a braided tubular structure of an electrical conductor defines a reception volume having a peripheral boundary for receiving the end section of the braided tubular structure. The device further includes one or more rotatable rollers of which each has at least one peripheral roller surface facing the peripheral boundary of the reception volume. The one or more rollers are adapted to move relative to the reception volume in a peripheral direction about the reception volume for flaring the end section.

An exemplary apparatus for impregnating varnish into stator coils of a hairpin winding type stator includes a supporting frame vertically installed on a base frame, a tilting bracket installed upper end portion of the supporting frame to be capable of tilting, a rotary bracket installed on the tilting bracket to be rotatable along a circumferential direction, core chucking members installed on the rotary bracket, inserted into a plurality of bolt engagement hole provided in the stator core, and fixing the stator core to the rotary bracket, a first varnish application unit movably installed on the base frame, and configured to apply the varnish to interior and exterior sides of a crown portion of the stator coils, and a second varnish application unit movably installed on the base frame, and configured to apply the varnish to interior and exterior sides of the welding portion of the stator coils.

An electronic device and a method for manufacturing the same are disclosed. The method for manufacturing the electronic device includes the following steps: providing a substrate; forming a metal layer on the substrate, wherein the metal layer has a first surface; forming a first insulating layer on the first surface of the metal layer; forming a second insulating layer on the first insulating layer; etching the first insulating layer and the second insulating layer to form a contact hole, wherein the contact hole exposes a portion of the first surface; cleaning the portion of the first surface exposed by the contact hole with a solution; and forming a transparent conductive layer on the second insulating layer, wherein the transparent conductive layer electrically connects with the metal layer.

A direct transfer apparatus includes a dot matrix transfer head, which includes an impact wire housing and a plurality of impact wires disposed within the impact wire housing and extending out of the impact wire housing. A guide head is attached to the impact wire housing. The guide head includes multiple holes configured to arrange the plurality of impact wires in a matrix configuration, the matrix configuration being a matched-pitch configuration.