Y10T225/304

METHOD OF SINGULATING SEMICONDUCTOR WAFER HAVING A PLURALITY OF DIE AND A BACK LAYER DISPOSED ALONG A MAJOR SURFACE

A method for forming an electronic device includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces. A layer of material is disposed atop a major surface of the wafer and the layer of material is placed adjacent to first carrier substrate comprising a first adhesive layer. The wafer is singulated through the spaces to form singulation lines. A second carrier substrate comprising a second adhesive layer is placed onto an opposite major surface of the wafer. The method includes moving a mechanical device adjacent to and in a direction generally parallel to one of the first carrier substrate or the second carrier substrate to separate the layer of material in the singulation lines. In one example, the second adhesive layer has an adhesive strength that is less than that of the first adhesive layer.

Method of singulating semiconductor wafer having a plurality of die and a back layer disposed along a major surface

Die are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a plate structure to apply a pressure to the wafer to separate the back layer in the singulation lines. The pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer.

METHOD OF SINGULATING SEMICONDUCTOR WAFER HAVING A PLURALITY OF DIE AND A BACK LAYER DISPOSED ALONG A MAJOR SURFACE

Die are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a plate structure to apply a pressure to the wafer to separate the back layer in the singulation lines. The pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer.

Method of singulating semiconductor wafer having a plurality of die and a back layer disposed along a major surface

De are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a plate structure to apply a pressure to the wafer to separate the back layer in the singulation lines. The pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer.

METHOD OF SINGULATING SEMICONDUCTOR WAFER HAVING BACK LAYER

De are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a plate structure to apply a pressure to the wafer to separate the back layer in the singulation lines. The pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer.

Method of singulating semiconductor wafer having back layer

In one embodiment, die are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a mechanical device to apply localized pressure to the wafer to separate the back layer in the singulation lines. The localized pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer.

Waste fluorescent light end-cutting apparatus

The present invention relates to a waste fluorescent light end-cutting device. The waste fluorescent light end-cutting device includes a conveyor transferring a waste fluorescent light, a heating wire disposed on each of both sides of the conveyor, a cooling wire subsequently disposed on a rear side of the heating wire, and a suction duct disposed between the cooling wire and the heating wire. A base cap is separated from the waste fluorescent light by using a temperature difference between the heating wire and the cooling wire.