A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

A cover window is provided and includes a substrate and a coating layer. The substrate has a thickness of 60 to 120 m. The substrate has a Re of 6000 to 12000. The coating layer is coated on the substrate. The cover window has a first direction and a second direction. The first direction is a machine direction of the cover window. The second direction is perpendicular to the first direction. A tensile stress of 50 to 130 MPa is exerted in the first direction. A tensile stress of 140 to 300 MPa is exerted in the second direction. Since the substrate has a Re of 6000 to 12000, a penetrating ray of an incident ray is uniformly distributed on a visible region of the cover window, so as to reduce the phase difference between reflected rays, reduce rainbow patterns, and enhance visibility under a polarizer.

According to one embodiment, a perpendicular magnetic recording medium has an arrangement obtained by sequentially stacking a nonmagnetic substrate, a soft magnetic underlayer, a nonmagnetic seed layer containing silver grains having an fcc structure and an amorphous germanium grain boundary formed between the silver grains, a reaction barrier layer containing 90 at % or more of silver or aluminum and having a thickness of 2 nm or less, a nonmagnetic interlayer formed on the reaction barrier layer and made of ruthenium or a ruthenium alloy, and a perpendicular magnetic recording layer.

Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.