Y10S977/774

PEROVSKITE NANOCRYSTAL PARTICLE LIGHT EMITTING BODY WITH CORE-SHELL STRUCTURE, METHOD FOR FABRICATING SAME, AND LIGHT EMITTING ELEMENT USING SAME
20170346024 · 2017-11-30 ·

Provided are a core-shell structured perovskite nanocrystalline particle light-emitting body, a method of preparing the same, and a light emitting device using the same. The core-shell structured organic-inorganic hybrid perovskite nanocrystalline particle light-emitting body or metal halide perovskite nanocrystalline particle light-emitting body is able to be dispersed in an organic solvent, and has a perovskite nanocrystal structure and a core-shell structured nanocrystalline particle structure. Therefore, in the perovskite nanocrystalline particle light-emitting body of the present invention, as a shell is formed of a substance having a wider band gap than that of a core, excitons may be more dominantly confined in the core, and durability of the nanocrystal may be improved to prevent exposure of the core perovskite to the air using a perovskite or inorganic semiconductor, which is stable in the air, or an organic polymer.

Quantum dots, production methods thereof, and electronic devices including the same

A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1:
ABX.sub.3+α  Chemical Formula 1
wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF.sub.4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.

NANOPARTICLES FOR PHOTOVOLTAIC AND LED DEVICES AND METHODS OF MAKING THE SAME

The present disclosure relates to a composition that includes a particle and a surface species, where the particle has a characteristic length between greater than zero nm and 100 nm inclusively, and the surface species is associated with a surface of the particle such that the particle maintains a crystalline form when the composition is at a temperature between −180° C. and 150° C.

ULTRAFILTRATION PURIFICATION OF QUANTUM-DOTS
20170341028 · 2017-11-30 ·

Examples are disclosed that relate to an ultrafiltration system for quantum-dot (QD) purification. The ultrafiltration system comprises a pump having a low-pressure side and a high-pressure side, a size-exclusion membrane having a low-pressure side and a high-pressure side, and an inlet/outlet arrangement. An inlet arranged on the high-pressure side of the size-exclusion membrane is coupled fluidically to the high-pressure side of the pump. A product-enriched outlet is arranged on the high-pressure side of the size-exclusion membrane, fluidically downstream of the inlet. A product-depleted outlet is arranged on the low-pressure side of the size-exclusion membrane.

Membrane-based NANO-electromechanical systems device and methods to make and use same

Nano-electromechanical systems (NEMS) devices that utilize thin electrically conductive membranes, which can be, for example, graphene membranes. The membrane-based NEMS devices can be used as sensors, electrical relays, adjustable angle mirror devices, variable impedance devices, and devices performing other functions.

Quantum dots with multiple insulator coatings

Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.

SEMICONDUCTOR NANOCRYSTAL-SILOXANE COMPOSITE RESIN COMPOSITION AND PREPARATION METHOD THEREOF
20170335180 · 2017-11-23 ·

The present invention relates to a semiconductor nanocrystal-siloxane composite resin composition and a preparation method thereof, and more specifically to a semiconductor nanocrystal-siloxane composite resin composition in which semiconductor nanocrystals are dispersed and bonded to a siloxane composite resin obtained by condensation reaction of a mixture of one or more organoalkoxysilanes or organosilanediol, and a preparation method thereof. The cured product of the semiconductor nanocrystal-siloxane resin composition of the present invention can be prepared as a coating, a film, a flake, etc., and the inherent characteristics of the semiconductor nanocrystal are maintained in a high temperature and high humidity environment and the reliability of the application devices is improved.

ISOLATED ENZYMATIC MANUFACTURE OF SEMICONDUCTOR NANOPARTICLES
20170335309 · 2017-11-23 · ·

Novel semiconductor nanoparticles and methods of biosynthesizing the same are provided by biosynthetic processes using cell-free supernatants and isolated enzymes.

CURABLE COMPOSITION CONTAINING SEMICONDUCTOR NANOPARTICLES, CURED PRODUCT, OPTICAL MATERIAL AND ELECTRONIC MATERIAL
20170327737 · 2017-11-16 · ·

The present invention provides a curable composition containing semiconductor nanoparticles, which contains luminescent semiconductor nanoparticles having good dispersibility and has low viscosity and excellent formability. Al curable composition containing semiconductor nanoparticles, contains: a monofunctional (meth)acrylate compound (a) having a tricyclodecane structure; at least one compound (h) selected from among (meth)acrylate compounds (b1) having two or more (meth)acryloyloxy groups and compounds (b2) represented by formula (1); a polymerization initiator (c); and luminescent semiconductor nanoparticles (d). H.sub.2C═C(R.sup.1)—CH.sub.2—O—CH.sub.2—C(R.sup.2)═CH.sub.2 (1) (In formula (1). R.sup.1 and R.sup.2 each independently represent a hydrogen atom,an alkyl group having 1 to 4 carbon atoms, or an organic group having 4 to 10 carbon atoms having an ester bond)

SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
20170331009 · 2017-11-16 · ·

A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.