Patent classifications
Y10S977/774
PEROVSKITE NANOCRYSTAL PARTICLE LIGHT EMITTING BODY WITH CORE-SHELL STRUCTURE, METHOD FOR FABRICATING SAME, AND LIGHT EMITTING ELEMENT USING SAME
Provided are a core-shell structured perovskite nanocrystalline particle light-emitting body, a method of preparing the same, and a light emitting device using the same. The core-shell structured organic-inorganic hybrid perovskite nanocrystalline particle light-emitting body or metal halide perovskite nanocrystalline particle light-emitting body is able to be dispersed in an organic solvent, and has a perovskite nanocrystal structure and a core-shell structured nanocrystalline particle structure. Therefore, in the perovskite nanocrystalline particle light-emitting body of the present invention, as a shell is formed of a substance having a wider band gap than that of a core, excitons may be more dominantly confined in the core, and durability of the nanocrystal may be improved to prevent exposure of the core perovskite to the air using a perovskite or inorganic semiconductor, which is stable in the air, or an organic polymer.
Quantum dots, production methods thereof, and electronic devices including the same
A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1:
ABX.sub.3+α Chemical Formula 1
wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF.sub.4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
NANOPARTICLES FOR PHOTOVOLTAIC AND LED DEVICES AND METHODS OF MAKING THE SAME
The present disclosure relates to a composition that includes a particle and a surface species, where the particle has a characteristic length between greater than zero nm and 100 nm inclusively, and the surface species is associated with a surface of the particle such that the particle maintains a crystalline form when the composition is at a temperature between −180° C. and 150° C.
ULTRAFILTRATION PURIFICATION OF QUANTUM-DOTS
Examples are disclosed that relate to an ultrafiltration system for quantum-dot (QD) purification. The ultrafiltration system comprises a pump having a low-pressure side and a high-pressure side, a size-exclusion membrane having a low-pressure side and a high-pressure side, and an inlet/outlet arrangement. An inlet arranged on the high-pressure side of the size-exclusion membrane is coupled fluidically to the high-pressure side of the pump. A product-enriched outlet is arranged on the high-pressure side of the size-exclusion membrane, fluidically downstream of the inlet. A product-depleted outlet is arranged on the low-pressure side of the size-exclusion membrane.
Membrane-based NANO-electromechanical systems device and methods to make and use same
Nano-electromechanical systems (NEMS) devices that utilize thin electrically conductive membranes, which can be, for example, graphene membranes. The membrane-based NEMS devices can be used as sensors, electrical relays, adjustable angle mirror devices, variable impedance devices, and devices performing other functions.
Quantum dots with multiple insulator coatings
Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.
SEMICONDUCTOR NANOCRYSTAL-SILOXANE COMPOSITE RESIN COMPOSITION AND PREPARATION METHOD THEREOF
The present invention relates to a semiconductor nanocrystal-siloxane composite resin composition and a preparation method thereof, and more specifically to a semiconductor nanocrystal-siloxane composite resin composition in which semiconductor nanocrystals are dispersed and bonded to a siloxane composite resin obtained by condensation reaction of a mixture of one or more organoalkoxysilanes or organosilanediol, and a preparation method thereof. The cured product of the semiconductor nanocrystal-siloxane resin composition of the present invention can be prepared as a coating, a film, a flake, etc., and the inherent characteristics of the semiconductor nanocrystal are maintained in a high temperature and high humidity environment and the reliability of the application devices is improved.
ISOLATED ENZYMATIC MANUFACTURE OF SEMICONDUCTOR NANOPARTICLES
Novel semiconductor nanoparticles and methods of biosynthesizing the same are provided by biosynthetic processes using cell-free supernatants and isolated enzymes.
CURABLE COMPOSITION CONTAINING SEMICONDUCTOR NANOPARTICLES, CURED PRODUCT, OPTICAL MATERIAL AND ELECTRONIC MATERIAL
The present invention provides a curable composition containing semiconductor nanoparticles, which contains luminescent semiconductor nanoparticles having good dispersibility and has low viscosity and excellent formability. Al curable composition containing semiconductor nanoparticles, contains: a monofunctional (meth)acrylate compound (a) having a tricyclodecane structure; at least one compound (h) selected from among (meth)acrylate compounds (b1) having two or more (meth)acryloyloxy groups and compounds (b2) represented by formula (1); a polymerization initiator (c); and luminescent semiconductor nanoparticles (d). H.sub.2C═C(R.sup.1)—CH.sub.2—O—CH.sub.2—C(R.sup.2)═CH.sub.2 (1) (In formula (1). R.sup.1 and R.sup.2 each independently represent a hydrogen atom,an alkyl group having 1 to 4 carbon atoms, or an organic group having 4 to 10 carbon atoms having an ester bond)
SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.